RSS for CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage devicehttp://academic.research.microsoft.com/Rss.aspx?cata=9&id=50805211Search RSS feed for Microsoft Academic SearchMSRA Libra RSS Burner(c)2008 Microsoft Corpration, All right reserved.Wed, 22 May 2013 12:17:41 GMTWed, 22 May 2013 12:17:41 GMTCMOS-integrated poly-SiGe cantilevers with read/write system for probe storage devicehttp://academic.research.microsoft.com/Publication/50805211Wed, 22 May 2013 05:17:41 GMT508052114S. Severi, J. Heck, T.-K. A. Chou, N. Belov, J.-S. Park, D. Harrar, A. Jain, R. Van Hoof, B. Du Bois, J. De Coster, O. V. Pedreira, M. Willegems, J. Vaes, G. Jamieson, L. Haspeslagh, D. Adams, V. Rao, S. Decoutere, A. Witvrouw: (Citations:4)view publication
A poly-SiGe technology enabling a dense array of micro-cantilevers and tips on CMOS is demonstrated. Built from a dual-thickness structural layer, the cantilevers feature a very small initial bending and have a compliant torsional suspension with a stiffness of 3times10-10 Nm/rad. Sharp tips are formed in a low-temperature amorphous silicon layer by isotropic plasma etching. An electrical read/write system is formed by connecting the tip to the CMOS with a suspended platinum trace, running on top of the cantilever.
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