<?xml version="1.0" encoding="utf-8"?><rss version="2.0"><channel><title>RSS for IEEE J SOLID-STATE CIRCUITS</title><link>http://academic.research.microsoft.com/Rss.aspx?id=5320&amp;cata=6</link><description>Search RSS feed for Microsoft Academic Search</description><generator>MSRA Libra RSS Burner</generator><copyright>(c)2008 Microsoft Corpration, All right reserved.</copyright><pubDate>Mon, 20 May 2013 00:47:13 GMT</pubDate><lastBuildDate>Mon, 20 May 2013 00:47:13 GMT</lastBuildDate><category /><item><title>A 151-mm$^{2}$ 64Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology</title><link>http://academic.research.microsoft.com/Publication/56946768</link><pubDate>Mon, 20 May 2013 00:47:13 GMT</pubDate><guid isPermaLink="false">56946768</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/54375519">Koichi Fukuda</a>, <a href="http://academic.research.microsoft.com/Author/13326173">Yoshihisa Watanabe</a>, <a href="http://academic.research.microsoft.com/Author/50506022">Eiichi Makino</a>, <a href="http://academic.research.microsoft.com/Author/18060900">Koichi Kawakami</a>, <a href="http://academic.research.microsoft.com/Author/54327019">Jumpei Sato</a>, <a href="http://academic.research.microsoft.com/Author/21705615">Teruo Takagiwa</a>, <a href="http://academic.research.microsoft.com/Author/54846563">Naoaki Kanagawa</a>, <a href="http://academic.research.microsoft.com/Author/52014735">Hitoshi Shiga</a>, <a href="http://academic.research.microsoft.com/Author/50885763">Naoya Tokiwa</a>, <a href="http://academic.research.microsoft.com/Author/50918968">Yoshihiko Shindo</a>, <a href="http://academic.research.microsoft.com/Author/17990466">Takeshi Ogawa</a>, <a href="http://academic.research.microsoft.com/Author/49476174">Toshiaki Edahiro</a>, <a href="http://academic.research.microsoft.com/Author/8225917">Makoto Iwai</a>, <a href="http://academic.research.microsoft.com/Author/49527348">Osamu Nagao</a>, <a href="http://academic.research.microsoft.com/Author/50147273">Junji Musha</a>, <a href="http://academic.research.microsoft.com/Author/54176161">Takatoshi Minamoto</a>, <a href="http://academic.research.microsoft.com/Author/56392852">Yuka Furuta</a>, <a href="http://academic.research.microsoft.com/Author/51941294">Kosuke Yanagidaira</a>, <a href="http://academic.research.microsoft.com/Author/3615743">Yuya Suzuki</a>, <a href="http://academic.research.microsoft.com/Author/21859282">Dai Nakamura</a>, <a href="http://academic.research.microsoft.com/Author/46293378">Yoshikazu Hosomura</a>, <a href="http://academic.research.microsoft.com/Author/49791473">Rieko Tanaka</a>, <a href="http://academic.research.microsoft.com/Author/49505117">Hiromitsu Komai</a>, <a href="http://academic.research.microsoft.com/Author/55833868">Mai Muramoto</a>, <a href="http://academic.research.microsoft.com/Author/49352047">Go Shikata</a>, <a href="http://academic.research.microsoft.com/Author/49488139">Ayako Yuminaka</a>, <a href="http://academic.research.microsoft.com/Author/8225928">Kiyofumi Sakurai</a>, <a href="http://academic.research.microsoft.com/Author/3331791">Manabu Sakai</a>, <a href="http://academic.research.microsoft.com/Author/55586060">Hong Ding</a>, <a href="http://academic.research.microsoft.com/Author/54622820">Mitsuyuki Watanabe</a>, <a href="http://academic.research.microsoft.com/Author/54259858">Yosuke Kato</a>, <a href="http://academic.research.microsoft.com/Author/55336534">Toru Miwa</a>, <a href="http://academic.research.microsoft.com/Author/56482062">Alexander Mak</a>, <a href="http://academic.research.microsoft.com/Author/13326234">Masaru Nakamichi</a>, <a href="http://academic.research.microsoft.com/Author/10511203">Gertjan Hemink</a>, <a href="http://academic.research.microsoft.com/Author/50169710">Dana Lee</a>, <a href="http://academic.research.microsoft.com/Author/51543214">Masaaki Higashitani</a>, <a href="http://academic.research.microsoft.com/Author/54880836">Brian Murphy</a>, <a href="http://academic.research.microsoft.com/Author/50563288">Bo Lei</a>, <a href="http://academic.research.microsoft.com/Author/3446091">Yasuhiko Matsunaga</a>, <a href="http://academic.research.microsoft.com/Author/55750350">Kiyomi Naruke</a>, <a href="http://academic.research.microsoft.com/Author/55602204">Takahiko Hara</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6072275">view publication</a></span></p><p>A 64-Gb MLC (2 bit/cell) NAND flash memory with the highest memory density to date as an MLC flash memory, has been successfully developed. To decrease the chip size, 2-physical-plane configuration with 16 KB wordline-length, a new bit-line hook-up architecture, and a top-metal-congestion-free optimized peripheral circuit floor plan, are introduced. ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 75-84, 2012</cite>]]></description></item><item><title>A 32 nm, 3.1 Billion Transistor, 12 Wide Issue Itanium® Processor for Mission-Critical Servers</title><link>http://academic.research.microsoft.com/Publication/56947225</link><pubDate>Mon, 20 May 2013 00:47:12 GMT</pubDate><guid isPermaLink="false">56947225</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/49726415">Reid Riedlinger</a>, <a href="http://academic.research.microsoft.com/Author/42819364">Ron Arnold</a>, <a href="http://academic.research.microsoft.com/Author/50199339">Larry Biro</a>, <a href="http://academic.research.microsoft.com/Author/51044059">Bill Bowhill</a>, <a href="http://academic.research.microsoft.com/Author/3394083">Jason Crop</a>, <a href="http://academic.research.microsoft.com/Author/52912663">Kevin Duda</a>, <a href="http://academic.research.microsoft.com/Author/10884349">Eric S. Fetzer</a>, <a href="http://academic.research.microsoft.com/Author/1495853">Olivier Franza</a>, <a href="http://academic.research.microsoft.com/Author/1619936">Tom Grutkowski</a>, <a href="http://academic.research.microsoft.com/Author/47546210">Casey Little</a>, <a href="http://academic.research.microsoft.com/Author/22335083">Charles Morganti</a>, <a href="http://academic.research.microsoft.com/Author/977455">Gary Moyer</a>, <a href="http://academic.research.microsoft.com/Author/47504085">Ashley Munch</a>, <a href="http://academic.research.microsoft.com/Author/56125330">Mahalingam Nagarajan</a>, <a href="http://academic.research.microsoft.com/Author/47636073">Cheolmin Parks</a>, <a href="http://academic.research.microsoft.com/Author/34362808">Christopher Poirier</a>, <a href="http://academic.research.microsoft.com/Author/49697923">Bill Repasky</a>, <a href="http://academic.research.microsoft.com/Author/52524294">Edi Roytman</a>, <a href="http://academic.research.microsoft.com/Author/18116264">Tejpal Singh</a>, <a href="http://academic.research.microsoft.com/Author/50228101">Matthew W. Stefaniw</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6061915">view publication</a></span></p><p>An Itanium® processor implemented in 32 nm CMOS with nine layers of Cu contains 3.1 billion transistors. The die measures 18.2 mm by 29.9 mm. The processor has eight multi-threaded cores, a ring based system interface and combined cache on the die is 50 MB. High-speed links allow for peak processor-to-processor bandwidth of ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 177-193, 2012</cite>]]></description></item><item><title>A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface</title><link>http://academic.research.microsoft.com/Publication/57012533</link><pubDate>Mon, 20 May 2013 00:47:11 GMT</pubDate><guid isPermaLink="false">57012533</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/45936180">Kambiz Kaviani</a>, <a href="http://academic.research.microsoft.com/Author/56514683">Ting Wu</a>, <a href="http://academic.research.microsoft.com/Author/12665276">Jason Wei</a>, <a href="http://academic.research.microsoft.com/Author/18133757">Amir Amirkhany</a>, <a href="http://academic.research.microsoft.com/Author/47478160">Jie Shen</a>, <a href="http://academic.research.microsoft.com/Author/51475267">T. J. Chin</a>, <a href="http://academic.research.microsoft.com/Author/3575902">Chintan Thakkar</a>, <a href="http://academic.research.microsoft.com/Author/11048620">Norman Chan</a>, <a href="http://academic.research.microsoft.com/Author/41676865">Catherine Chen</a>, <a href="http://academic.research.microsoft.com/Author/42871990">Bing Ren Chuang</a>, <a href="http://academic.research.microsoft.com/Author/54778325">Deborah Dressler</a>, <a href="http://academic.research.microsoft.com/Author/42876732">Vijay P. Gadde</a>, <a href="http://academic.research.microsoft.com/Author/3573821">Mohammad Hekmat</a>, <a href="http://academic.research.microsoft.com/Author/42830717">Eugene Ho</a>, <a href="http://academic.research.microsoft.com/Author/22246817">Charlie Huang</a>, <a href="http://academic.research.microsoft.com/Author/55824950">Phuong Le</a>, <a href="http://academic.research.microsoft.com/Author/3582940">Mahabaleshwara</a>, <a href="http://academic.research.microsoft.com/Author/17996369">Chris Madden</a>, <a href="http://academic.research.microsoft.com/Author/3582941">Navin Kumar Mishra</a>, <a href="http://academic.research.microsoft.com/Author/47514533">Lenesh Raghavan</a>, <a href="http://academic.research.microsoft.com/Author/53622448">Keisuke Saito</a>, <a href="http://academic.research.microsoft.com/Author/50505143">Ralf Schmitt</a>, <a href="http://academic.research.microsoft.com/Author/51794366">Dave Secker</a>, <a href="http://academic.research.microsoft.com/Author/2343082">Xudong Shi</a>, <a href="http://academic.research.microsoft.com/Author/50548117">Shuaeb Fazeel</a>, <a href="http://academic.research.microsoft.com/Author/42793289">Gundlapalli Shanmukha Srinivas</a>, <a href="http://academic.research.microsoft.com/Author/55293954">Steve Zhang</a>, <a href="http://academic.research.microsoft.com/Author/50464718">Chanh Tran</a>, <a href="http://academic.research.microsoft.com/Author/51375790">Arun Vaidyanath</a>, <a href="http://academic.research.microsoft.com/Author/7562009">Kapil Vyas</a>, <a href="http://academic.research.microsoft.com/Author/42833264">Manish Jain</a>, <a href="http://academic.research.microsoft.com/Author/12761873">Kun-Yung Ken Chang</a>, <a href="http://academic.research.microsoft.com/Author/45125394">Xingchao Yuan</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06164279">view publication</a></span></p><p>This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3” FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 926-937, 2012</cite>]]></description></item><item><title>A 70Mb/s 100.5dBm Sensitivity 65-nm LP MIMO Chipset for WiMAX Portable Router</title><link>http://academic.research.microsoft.com/Publication/56946762</link><pubDate>Mon, 20 May 2013 00:47:10 GMT</pubDate><guid isPermaLink="false">56946762</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/55219578">Shyuan Liao</a>, <a href="http://academic.research.microsoft.com/Author/56700483">Yen-Shuo Chang</a>, <a href="http://academic.research.microsoft.com/Author/12619796">Chia-Hsin Wu</a>, <a href="http://academic.research.microsoft.com/Author/3474365">Hung-Chieh Tsai</a>, <a href="http://academic.research.microsoft.com/Author/50403761">Hsin-Hua Chen</a>, <a href="http://academic.research.microsoft.com/Author/23053085">Min Chen</a>, <a href="http://academic.research.microsoft.com/Author/56670557">Ching-Wen Hsueh</a>, <a href="http://academic.research.microsoft.com/Author/56398051">Jian-Bang Lin</a>, <a href="http://academic.research.microsoft.com/Author/54492308">Den-Kai Juang</a>, <a href="http://academic.research.microsoft.com/Author/56435571">Shun-An Yang</a>, <a href="http://academic.research.microsoft.com/Author/56370163">Chin-Tai Liu</a>, <a href="http://academic.research.microsoft.com/Author/53579687">Tsai-Pao Lee</a>, <a href="http://academic.research.microsoft.com/Author/46567022">Jin-Ru Chen</a>, <a href="http://academic.research.microsoft.com/Author/56807294">Chih-Heng Shih</a>, <a href="http://academic.research.microsoft.com/Author/43331009">Barry Hong</a>, <a href="http://academic.research.microsoft.com/Author/3510364">Heng-Ruey Hsu</a>, <a href="http://academic.research.microsoft.com/Author/51123504">Chih-Yuan Wang</a>, <a href="http://academic.research.microsoft.com/Author/8146768">Meng-Shiang Lin</a>, <a href="http://academic.research.microsoft.com/Author/3574171">Wei-Hsiang Tseng</a>, <a href="http://academic.research.microsoft.com/Author/42793743">Che-Hsiung Yang</a>, <a href="http://academic.research.microsoft.com/Author/42842969">Lawrence Chen Lee</a>, <a href="http://academic.research.microsoft.com/Author/49827030">Ting-Jyun Jheng</a>, <a href="http://academic.research.microsoft.com/Author/53526633">Wen-Wei Yang</a>, <a href="http://academic.research.microsoft.com/Author/54071266">Ming-Yang Chao</a>, <a href="http://academic.research.microsoft.com/Author/1571111">Jyh-Shin Pan</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6045298">view publication</a></span></p><p>In this paper, we present a low-power high-performance WiMAX chipset fully compliant with IEEE 802.16e specification corrigendum 1, 2 for mobile broadband access and WiMAX Forum system profile Wave2. The chipset is comprised of a 632.7-mW/24.99-${\hbox {mm}}^{2}$ modem/router chip and a 364-mW/11.05- ${\hbox {mm}}^{2}$ dual-band ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 61-74, 2012</cite>]]></description></item><item><title>A 12.8Gb/s/link Tri-Modal Single-Ended Memory Interface</title><link>http://academic.research.microsoft.com/Publication/57012532</link><pubDate>Mon, 20 May 2013 00:47:09 GMT</pubDate><guid isPermaLink="false">57012532</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/18133757">Amir Amirkhany</a>, <a href="http://academic.research.microsoft.com/Author/12665276">Jason Wei</a>, <a href="http://academic.research.microsoft.com/Author/3582941">Navin Kumar Mishra</a>, <a href="http://academic.research.microsoft.com/Author/47478160">Jie Shen</a>, <a href="http://academic.research.microsoft.com/Author/41676865">Catherine Chen</a>, <a href="http://academic.research.microsoft.com/Author/51475267">T. J. Chin</a>, <a href="http://academic.research.microsoft.com/Author/54778325">Deborah Dressler</a>, <a href="http://academic.research.microsoft.com/Author/22246817">Charlie Huang</a>, <a href="http://academic.research.microsoft.com/Author/42876732">Vijay P. Gadde</a>, <a href="http://academic.research.microsoft.com/Author/3573821">Mohammad Hekmat</a>, <a href="http://academic.research.microsoft.com/Author/45936180">Kambiz Kaviani</a>, <a href="http://academic.research.microsoft.com/Author/1609132">Hai Lan</a>, <a href="http://academic.research.microsoft.com/Author/55824950">Phuong Le</a>, <a href="http://academic.research.microsoft.com/Author/3582940">Mahabaleshwara</a>, <a href="http://academic.research.microsoft.com/Author/17996369">Chris Madden</a>, <a href="http://academic.research.microsoft.com/Author/56549900">Sanku Mukherjee</a>, <a href="http://academic.research.microsoft.com/Author/3837820">Leneesh Raghavan</a>, <a href="http://academic.research.microsoft.com/Author/53622448">Keisuke Saito</a>, <a href="http://academic.research.microsoft.com/Author/51794366">Dave Secker</a>, <a href="http://academic.research.microsoft.com/Author/49603208">Arul Sendhil</a>, <a href="http://academic.research.microsoft.com/Author/50505143">Ralf Schmitt</a>, <a href="http://academic.research.microsoft.com/Author/50548117">Shuaeb Fazeel</a>, <a href="http://academic.research.microsoft.com/Author/42793289">Gundlapalli Shanmukha Srinivas</a>, <a href="http://academic.research.microsoft.com/Author/56514683">Ting Wu</a>, <a href="http://academic.research.microsoft.com/Author/50464718">Chanh Tran</a>, <a href="http://academic.research.microsoft.com/Author/51375790">Arun Vaidyanath</a>, <a href="http://academic.research.microsoft.com/Author/7562009">Kapil Vyas</a>, <a href="http://academic.research.microsoft.com/Author/23485722">Ling Yang</a>, <a href="http://academic.research.microsoft.com/Author/42833264">Manish Jain</a>, <a href="http://academic.research.microsoft.com/Author/12761873">Kun-Yung Ken Chang</a>, <a href="http://academic.research.microsoft.com/Author/45125394">Xingchao Yuan</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6164278">view publication</a></span></p><p>This paper presents a tri-modal asymmetric memory controller interface that achieves 12.8-Gbps single-ended (SE) signaling over $3^{\prime\prime}$ stripline FR4 traces. The controller can be configured to communicate with commercially available GDDR5 and DDR3 memories at 6.4 and 1.6 Gbps, respectively, with no package change. The interface is equipped with a compact voltage-...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 911-925, 2012</cite>]]></description></item><item><title>A 7.2 GSa/s, 14 Bit or 12 GSa/s, 12 Bit Signal Generator on a Chip in a 165 GHz ${\rm f}_{\rm T}$ BiCMOS Process</title><link>http://academic.research.microsoft.com/Publication/57012531</link><pubDate>Mon, 20 May 2013 00:47:08 GMT</pubDate><guid isPermaLink="false">57012531</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/43178510">Frank Van de Sande</a>, <a href="http://academic.research.microsoft.com/Author/9419163">Nico Lugil</a>, <a href="http://academic.research.microsoft.com/Author/42851682">Filip Demarsin</a>, <a href="http://academic.research.microsoft.com/Author/47481654">Zeger Hendrix</a>, <a href="http://academic.research.microsoft.com/Author/47313182">Alvin Andries</a>, <a href="http://academic.research.microsoft.com/Author/50126378">Peter Brandt</a>, <a href="http://academic.research.microsoft.com/Author/47532775">William Anklam</a>, <a href="http://academic.research.microsoft.com/Author/22381569">Jeffery S. Patterson</a>, <a href="http://academic.research.microsoft.com/Author/351266">Brian Miller</a>, <a href="http://academic.research.microsoft.com/Author/44162174">Michael Rytting</a>, <a href="http://academic.research.microsoft.com/Author/49453018">Mike Whaley</a>, <a href="http://academic.research.microsoft.com/Author/52209802">Bob Jewett</a>, <a href="http://academic.research.microsoft.com/Author/12649723">Jacky Liu</a>, <a href="http://academic.research.microsoft.com/Author/42803498">Jake Wegman</a>, <a href="http://academic.research.microsoft.com/Author/50626368">Ken Poulton</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6162968">view publication</a></span></p><p>We present a complete signal generator with integrated digital-to-analog convertor (DAC) on a chip which can generate complex waveforms at up to 7.2 GSa/s with 14 bit resolution or at up to 12 GSa/s with 12 bit resolution. The 3 dB bandwidth is 4.4 GHz. The chip includes digital signal processing (DSP) logic for ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 1003-1012, 2012</cite>]]></description></item><item><title>A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface</title><link>http://academic.research.microsoft.com/Publication/57012517</link><pubDate>Mon, 20 May 2013 00:47:07 GMT</pubDate><guid isPermaLink="false">57012517</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/53650672">Chulbum Kim</a>, <a href="http://academic.research.microsoft.com/Author/11558059">Jinho Ryu</a>, <a href="http://academic.research.microsoft.com/Author/18193208">Taesung Lee</a>, <a href="http://academic.research.microsoft.com/Author/56391687">Hyunggon Kim</a>, <a href="http://academic.research.microsoft.com/Author/3669876">Jaewoo Lim</a>, <a href="http://academic.research.microsoft.com/Author/735562">Jaeyong Jeong</a>, <a href="http://academic.research.microsoft.com/Author/49293349">Seonghwan Seo</a>, <a href="http://academic.research.microsoft.com/Author/47348940">Hongsoo Jeon</a>, <a href="http://academic.research.microsoft.com/Author/47580696">Bokeun Kim</a>, <a href="http://academic.research.microsoft.com/Author/3663680">Inyoul Lee</a>, <a href="http://academic.research.microsoft.com/Author/44322087">Dooseop Lee</a>, <a href="http://academic.research.microsoft.com/Author/55605429">Pansuk Kwak</a>, <a href="http://academic.research.microsoft.com/Author/56341143">Seongsoon Cho</a>, <a href="http://academic.research.microsoft.com/Author/18974813">Yongsik Yim</a>, <a href="http://academic.research.microsoft.com/Author/1495438">Changhyun Cho</a>, <a href="http://academic.research.microsoft.com/Author/1167747">Woopyo Jeong</a>, <a href="http://academic.research.microsoft.com/Author/50586500">Jin-Man Han</a>, <a href="http://academic.research.microsoft.com/Author/50188790">Duheon Song</a>, <a href="http://academic.research.microsoft.com/Author/50438598">Kyehyun Kyung</a>, <a href="http://academic.research.microsoft.com/Author/25138">Young-Ho Lim</a>, <a href="http://academic.research.microsoft.com/Author/12661265">Young-Hyun Jun</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6151872">view publication</a></span></p><p>A monolithic 64 Gb MLC NAND flash based on 21 $~$nm process technology has been developed. The device consists of 4-plane arrays and provides page size of up to 32 KB. It also features a newly developed asynchronous DDR interface that can support up to the maximum bandwidth of 400 MB/s. To improve performance and reliability, on-chip ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 981-989, 2012</cite>]]></description></item><item><title>A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 $\times$ 128 I/Os Using TSV Based Stacking</title><link>http://academic.research.microsoft.com/Publication/56946759</link><pubDate>Mon, 20 May 2013 00:47:06 GMT</pubDate><guid isPermaLink="false">56946759</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/36995078">Jung-Sik Kim</a>, <a href="http://academic.research.microsoft.com/Author/51688770">Chi Sung Oh</a>, <a href="http://academic.research.microsoft.com/Author/12662422">Hocheol Lee</a>, <a href="http://academic.research.microsoft.com/Author/53771137">Donghyuk Lee</a>, <a href="http://academic.research.microsoft.com/Author/56202377">Hyong Ryol Hwang</a>, <a href="http://academic.research.microsoft.com/Author/56408468">Sooman Hwang</a>, <a href="http://academic.research.microsoft.com/Author/56363865">Byongwook Na</a>, <a href="http://academic.research.microsoft.com/Author/56372330">Joungwook Moon</a>, <a href="http://academic.research.microsoft.com/Author/3609741">Jin-Guk Kim</a>, <a href="http://academic.research.microsoft.com/Author/51306212">Hanna Park</a>, <a href="http://academic.research.microsoft.com/Author/22690568">Jang-Woo Ryu</a>, <a href="http://academic.research.microsoft.com/Author/51308859">Kiwon Park</a>, <a href="http://academic.research.microsoft.com/Author/54422826">Sang Kyu Kang</a>, <a href="http://academic.research.microsoft.com/Author/17941635">So-Young Kim</a>, <a href="http://academic.research.microsoft.com/Author/12725544">Hoyoung Kim</a>, <a href="http://academic.research.microsoft.com/Author/54987999">Jong-Min Bang</a>, <a href="http://academic.research.microsoft.com/Author/56639628">Hyunyoon Cho</a>, <a href="http://academic.research.microsoft.com/Author/10527719">Minsoo Jang</a>, <a href="http://academic.research.microsoft.com/Author/35859618">Cheolmin Han</a>, <a href="http://academic.research.microsoft.com/Author/50552352">Jung-Bae LeeLee</a>, <a href="http://academic.research.microsoft.com/Author/12626004">Joo Sun Choi</a>, <a href="http://academic.research.microsoft.com/Author/12661265">Young-Hyun Jun</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6025219">view publication</a></span></p><p>A 1.2 V 1 Gb mobile SDRAM, having 4 channels with 512 DQ pins has been developed with 50 nm technology. It exhibits 330.6 mW read operating power during 4 channel operation, achieving 12.8 GB/s data bandwidth. Test correlation techniques to verify functions through micro bumps and test pads have been developed. Block based dual period ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 107-116, 2012</cite>]]></description></item><item><title>Circuit and Physical Design Implementation of the Microprocessor Chip for the zEnterprise System</title><link>http://academic.research.microsoft.com/Publication/56947226</link><pubDate>Mon, 20 May 2013 00:47:05 GMT</pubDate><guid isPermaLink="false">56947226</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/1354309">James Warnock</a>, <a href="http://academic.research.microsoft.com/Author/3336505">Yiu-Hing Chan</a>, <a href="http://academic.research.microsoft.com/Author/42225023">Sean Carey</a>, <a href="http://academic.research.microsoft.com/Author/55165257">Huajun Wen</a>, <a href="http://academic.research.microsoft.com/Author/42879528">Pat Meaney</a>, <a href="http://academic.research.microsoft.com/Author/3377651">Guenter Gerwig</a>, <a href="http://academic.research.microsoft.com/Author/47725122">Howard H. Smith</a>, <a href="http://academic.research.microsoft.com/Author/53672672">Yuen Chan</a>, <a href="http://academic.research.microsoft.com/Author/1064551">John Davis</a>, <a href="http://academic.research.microsoft.com/Author/56865471">Paul Bunce</a>, <a href="http://academic.research.microsoft.com/Author/34121943">Antonio Pelella</a>, <a href="http://academic.research.microsoft.com/Author/55398015">Dan Rodko</a>, <a href="http://academic.research.microsoft.com/Author/10374204">Pradip Patel</a>, <a href="http://academic.research.microsoft.com/Author/52181152">Thomas Strach</a>, <a href="http://academic.research.microsoft.com/Author/47452281">Doug Malone</a>, <a href="http://academic.research.microsoft.com/Author/53583593">Frank Malgioglio</a>, <a href="http://academic.research.microsoft.com/Author/615068">José Neves</a>, <a href="http://academic.research.microsoft.com/Author/9460034">David L. Rude</a>, <a href="http://academic.research.microsoft.com/Author/2335935">William Huott</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6064913">view publication</a></span></p><p>This paper describes the circuit and physical design features of the z196 processor chip, implemented in a 45 nm SOI technology. The chip contains 4 super-scalar, out-of-order processor cores, running at 5.2 GHz, on a die with an area of 512 mm$^{2}$ containing an estimated 1.4 billion transistors. The core and chip design methodology ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 151-163, 2012</cite>]]></description></item><item><title>A 28 nm 0.6 V Low Power DSP for Mobile Applications</title><link>http://academic.research.microsoft.com/Publication/56946769</link><pubDate>Mon, 20 May 2013 00:47:04 GMT</pubDate><guid isPermaLink="false">56946769</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/17548">Nathan Ickes</a>, <a href="http://academic.research.microsoft.com/Author/3343476">Gordon Gammie</a>, <a href="http://academic.research.microsoft.com/Author/22335470">Mahmut E. Sinangil</a>, <a href="http://academic.research.microsoft.com/Author/8976250">Rahul Rithe</a>, <a href="http://academic.research.microsoft.com/Author/53766173">Jie Gu</a>, <a href="http://academic.research.microsoft.com/Author/47166958">Alice Wang</a>, <a href="http://academic.research.microsoft.com/Author/5997666">Hugh Mair</a>, <a href="http://academic.research.microsoft.com/Author/5108661">Satyendra Datla</a>, <a href="http://academic.research.microsoft.com/Author/56762467">Bing Rong</a>, <a href="http://academic.research.microsoft.com/Author/49457558">Sushma Honnavara-Prasad</a>, <a href="http://academic.research.microsoft.com/Author/56064349">Lam Ho</a>, <a href="http://academic.research.microsoft.com/Author/53351964">Greg Baldwin</a>, <a href="http://academic.research.microsoft.com/Author/46790605">Dennis Buss</a>, <a href="http://academic.research.microsoft.com/Author/50690481">Anantha P. Chandrakasan</a>, <a href="http://academic.research.microsoft.com/Author/3343527">Uming Ko</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06081953">view publication</a></span></p><p>Processors for next generation mobile devices will need to operate across a wide supply voltage range in order to support both high performance and high power efficiency modes of operation. However, the effects of local transistor threshold $(V_{T})$ variation, already a significant issue in today's advanced process technologies, and further exacerbated at low voltages, complicate the task of ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 35-46, 2012</cite>]]></description></item><item><title>CMOS Image Sensors With MultiBucket Pixels for Computational Photography</title><link>http://academic.research.microsoft.com/Publication/57012518</link><pubDate>Mon, 20 May 2013 00:47:03 GMT</pubDate><guid isPermaLink="false">57012518</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/51502691">Gordon Wan</a>, <a href="http://academic.research.microsoft.com/Author/22043037">Xiangli Li</a>, <a href="http://academic.research.microsoft.com/Author/50020829">Gennadiy Agranov</a>, <a href="http://academic.research.microsoft.com/Author/747018">Marc Levoy</a>, <a href="http://academic.research.microsoft.com/Author/34189912">Mark Horowitz</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6152169">view publication</a></span></p><p>This paper presents new image sensors with multi- bucket pixels that enable time-multiplexed exposure, an alternative imaging approach. This approach deals nicely with scene motion, and greatly improves high dynamic range imaging, structured light illumination, motion corrected photography, etc. To implement an in-pixel memory or a bucket, the new image sensors incorporate the virtual phase CCD concept into ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 1031-1042, 2012</cite>]]></description></item><item><title>A 1.0-ns/1.0-V Delay-Locked Loop With Racing Mode and Countered CAS Latency Controller for DRAM Interfaces</title><link>http://academic.research.microsoft.com/Publication/57020818</link><pubDate>Mon, 20 May 2013 00:47:02 GMT</pubDate><guid isPermaLink="false">57020818</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/1078508">Hyun-Woo Lee</a>, <a href="http://academic.research.microsoft.com/Author/47266306">Hoon Choi</a>, <a href="http://academic.research.microsoft.com/Author/55479184">Beom-Ju Shin</a>, <a href="http://academic.research.microsoft.com/Author/55175679">Kyung-Hoon Kim</a>, <a href="http://academic.research.microsoft.com/Author/21802818">Kyung-Whan Kim</a>, <a href="http://academic.research.microsoft.com/Author/18176755">Jaeil Kim</a>, <a href="http://academic.research.microsoft.com/Author/24611643">Kwang-Hyun Kim</a>, <a href="http://academic.research.microsoft.com/Author/1440044">Jong-Ho Jung</a>, <a href="http://academic.research.microsoft.com/Author/1236743">Jae-Hwan Kim</a>, <a href="http://academic.research.microsoft.com/Author/22253303">Eun-Young Park</a>, <a href="http://academic.research.microsoft.com/Author/35916216">Jong-Hwan Kim</a>, <a href="http://academic.research.microsoft.com/Author/3535199">Jin-Hee Cho</a>, <a href="http://academic.research.microsoft.com/Author/54629472">Namgyu Rye</a>, <a href="http://academic.research.microsoft.com/Author/42834370">Jun-Hyun Chun</a>, <a href="http://academic.research.microsoft.com/Author/47624016">Yunsaing Kim</a>, <a href="http://academic.research.microsoft.com/Author/1438651">Chulwoo Kim</a>, <a href="http://academic.research.microsoft.com/Author/51066675">Young-Jung Choi</a>, <a href="http://academic.research.microsoft.com/Author/50229158">Byong-Tae Chung</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06189759">view publication</a></span></p><p>The digital delay-locked loop (DLL) with racing mode and the countered column address strobe (CAS) latency controller are proposed in this paper. The dual-DLL architecture with racing operation is adopted to achieve low power consumption, low jitter, fast locking, wide range of locking, and stuck-free control. The merged dual coarse delay line (MDCDL) reduces the dynamic power ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1436-1447, 2012</cite>]]></description></item><item><title>A 27% Active-Power-Reduced 40-nm CMOS Multimedia SoC With Adaptive Voltage Scaling Using Distributed Universal Delay Lines</title><link>http://academic.research.microsoft.com/Publication/57012516</link><pubDate>Mon, 20 May 2013 00:47:01 GMT</pubDate><guid isPermaLink="false">57012516</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/22334168">Yoshifumi Ikenaga</a>, <a href="http://academic.research.microsoft.com/Author/13143024">Masahiro Nomura</a>, <a href="http://academic.research.microsoft.com/Author/55400836">Shuji Suenaga</a>, <a href="http://academic.research.microsoft.com/Author/44156190">Hideo Sonohara</a>, <a href="http://academic.research.microsoft.com/Author/51523246">Yoshitaka Horikoshi</a>, <a href="http://academic.research.microsoft.com/Author/53879073">Toshiyuki Saito</a>, <a href="http://academic.research.microsoft.com/Author/53766974">Yukio Ohdaira</a>, <a href="http://academic.research.microsoft.com/Author/42789586">Yoichiro Nishio</a>, <a href="http://academic.research.microsoft.com/Author/51539155">Tomohiro Iwashita</a>, <a href="http://academic.research.microsoft.com/Author/56517541">Miyuki Satou</a>, <a href="http://academic.research.microsoft.com/Author/52699318">Koji Nishida</a>, <a href="http://academic.research.microsoft.com/Author/3334872">Koichi Nose</a>, <a href="http://academic.research.microsoft.com/Author/47406383">Koichiro Noguchi</a>, <a href="http://academic.research.microsoft.com/Author/47327691">Yoshihiro Hayashi</a>, <a href="http://academic.research.microsoft.com/Author/53685505">Masayuki Mizuno</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06151871">view publication</a></span></p><p>AVS technique for extremely scaled SoCs has been developed. To reduce design cost, we have developed a supply voltage control scheme employing universal delay line (UDL), rather than a replica delay line, for monitoring the critical path delay $({\rm T}_{\rm CRIT})$. The UDL can be used in any product without any need for customizing. In addition, averaging the results ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 832-840, 2012</cite>]]></description></item><item><title>Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology</title><link>http://academic.research.microsoft.com/Publication/57014845</link><pubDate>Mon, 20 May 2013 00:47:00 GMT</pubDate><guid isPermaLink="false">57014845</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3513641">Marc Tiebout</a>, <a href="http://academic.research.microsoft.com/Author/17955455">Hans-Dieter Wohlmuth</a>, <a href="http://academic.research.microsoft.com/Author/47772177">Herbert Knapp</a>, <a href="http://academic.research.microsoft.com/Author/12661740">Raffaele Salerno</a>, <a href="http://academic.research.microsoft.com/Author/52847136">Michael Druml</a>, <a href="http://academic.research.microsoft.com/Author/840128">Mirjana Rest</a>, <a href="http://academic.research.microsoft.com/Author/53263790">Johann Kaeferboeck</a>, <a href="http://academic.research.microsoft.com/Author/52662756">Johann Wuertele</a>, <a href="http://academic.research.microsoft.com/Author/51386420">Sherif Sayed Ahmed</a>, <a href="http://academic.research.microsoft.com/Author/50513591">Andreas Schiessl</a>, <a href="http://academic.research.microsoft.com/Author/52797784">Ralf Juenemann</a>, <a href="http://academic.research.microsoft.com/Author/50227783">Anna Zielska</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06156763">view publication</a></span></p><p>This paper presents a chipset aiming at high resolution imaging systems for real-time people screening applications operating near the W-band. The frequency of operation ranges from 70 GHz to 82 GHz for optimal image resolution and depth of focus. The frequency generation for both receiver and transmitter chips consists of a mixer based frequency quadrupler with an input ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1175-1184, 2012</cite>]]></description></item><item><title>Dual-Loop System of Distributed Microregulators With High DC Accuracy, Load Response Time Below 500 ps, and 85mV Dropout Voltage</title><link>http://academic.research.microsoft.com/Publication/57012524</link><pubDate>Mon, 20 May 2013 00:46:59 GMT</pubDate><guid isPermaLink="false">57012524</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/449290">John F. Bulzacchelli</a>, <a href="http://academic.research.microsoft.com/Author/49316213">Zeynep Toprak-Deniz</a>, <a href="http://academic.research.microsoft.com/Author/4432251">Todd M. Rasmus</a>, <a href="http://academic.research.microsoft.com/Author/56586802">Joseph A. Iadanza</a>, <a href="http://academic.research.microsoft.com/Author/53146881">William L. Bucossi</a>, <a href="http://academic.research.microsoft.com/Author/47575388">Seongwon Kim</a>, <a href="http://academic.research.microsoft.com/Author/56530651">Rafael Blanco</a>, <a href="http://academic.research.microsoft.com/Author/55985717">Carrie E. Cox</a>, <a href="http://academic.research.microsoft.com/Author/53726604">Mohak Chhabra</a>, <a href="http://academic.research.microsoft.com/Author/53183218">Christopher D. LeBlanc</a>, <a href="http://academic.research.microsoft.com/Author/55194062">Christian L. Trudeau</a>, <a href="http://academic.research.microsoft.com/Author/12619329">Daniel J. Friedman</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6157638">view publication</a></span></p><p>A dual-loop architecture employs eight distributed microregulators (UREGs) to achieve load response times below 500 ps in 45-nm SOI CMOS. The trip point of an asynchronous comparator inside each UREG is tuned for high DC accuracy with a local charge pump, which receives UP/DOWN currents from a slow outer feedback loop. The feedback through the charge pumps ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 863-874, 2012</cite>]]></description></item><item><title>A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing</title><link>http://academic.research.microsoft.com/Publication/57020812</link><pubDate>Mon, 20 May 2013 00:46:58 GMT</pubDate><guid isPermaLink="false">57020812</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/34630526">Ming-Hsien Tu</a>, <a href="http://academic.research.microsoft.com/Author/55172663">Jihi-Yu Lin</a>, <a href="http://academic.research.microsoft.com/Author/3645459">Ming-Chien Tsai</a>, <a href="http://academic.research.microsoft.com/Author/50556156">Chien-Yu Lu</a>, <a href="http://academic.research.microsoft.com/Author/49374005">Yuh-Jiun Lin</a>, <a href="http://academic.research.microsoft.com/Author/55248470">Meng-Hsueh Wang</a>, <a href="http://academic.research.microsoft.com/Author/47458467">Huan-Shun Huang</a>, <a href="http://academic.research.microsoft.com/Author/49364505">Kuen-Di Lee</a>, <a href="http://academic.research.microsoft.com/Author/65418">Shyh-Jye Jou</a>, <a href="http://academic.research.microsoft.com/Author/1373537">Ching-Te Chuang</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06183492">view publication</a></span></p><p>This paper presents a novel single-ended disturb-free 9T subthreshold SRAM cell with cross-point data-aware Write word-line structure. The disturb-free feature facilitates bit-interleaving architecture, which can reduce multiple-bit upsets in a single word and enhance soft error immunity by employing Error Checking and Correction (ECC) technique. The proposed 9T SRAM cell is demonstrated ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1469-1482, 2012</cite>]]></description></item><item><title>A Low-Power Integrated x86–64 and Graphics Processor for Mobile Computing Devices</title><link>http://academic.research.microsoft.com/Publication/56946763</link><pubDate>Mon, 20 May 2013 00:46:57 GMT</pubDate><guid isPermaLink="false">56946763</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/10562617">Denis Foley</a>, <a href="http://academic.research.microsoft.com/Author/50615731">Pankaj Bansal</a>, <a href="http://academic.research.microsoft.com/Author/1864022">Don Cherepacha</a>, <a href="http://academic.research.microsoft.com/Author/56053527">Robert Wasmuth</a>, <a href="http://academic.research.microsoft.com/Author/50541882">Aswin Gunasekar</a>, <a href="http://academic.research.microsoft.com/Author/55066562">Srinivasa Gutta</a>, <a href="http://academic.research.microsoft.com/Author/57104544">Ajay Naini</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6054032">view publication</a></span></p><p>The first AMD Fusion™ accelerated processing unit (APU), code-named “Zacate,” incorporates a pair of Bobcat x86 processors, a 1 MB L2 cache, an AMD Radeon™ 6310 DirectX®11 GPU with 80 stream processors, a media accelerator, an integrated NorthBridge (NB), integrated DisplayPort, LVDS, and VGA display interfaces, a PCIe® Gen1 or Gen2 I/O interface, and a single 64-...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 220-231, 2012</cite>]]></description></item><item><title>A 1 W 104 dB SNR Filter-Less Fully-Digital Open-Loop Class D Audio Amplifier With EMI Reduction</title><link>http://academic.research.microsoft.com/Publication/57024897</link><pubDate>Mon, 20 May 2013 00:46:56 GMT</pubDate><guid isPermaLink="false">57024897</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/47573310">Federico Guanziroli</a>, <a href="http://academic.research.microsoft.com/Author/43822612">Rossella Bassoli</a>, <a href="http://academic.research.microsoft.com/Author/49431964">Carlo Crippa</a>, <a href="http://academic.research.microsoft.com/Author/49336605">Daniele Devecchi</a>, <a href="http://academic.research.microsoft.com/Author/50523636">Germano Nicollini</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6133301">view publication</a></span></p><p>This paper presents the design and implementation of a high-performance fully-digital PWM DAC and switching output stage which can drive a speaker in portable devices, including cellular phones. Thanks to the quaternary pulse-width modulation scheme, filter-less implementation are possible. A pre-modulation DSP algorithm eliminates the harmonic distortion inherent to the employed modulation process, and an ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 3, pp. 686-698, 2012</cite>]]></description></item><item><title>A Fully Integrated Multi-CPU, Processor Graphics, and Memory Controller 32-nm Processor</title><link>http://academic.research.microsoft.com/Publication/56947223</link><pubDate>Mon, 20 May 2013 00:46:55 GMT</pubDate><guid isPermaLink="false">56947223</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/49535852">Marcelo Yuffe</a>, <a href="http://academic.research.microsoft.com/Author/55975470">Moty Mehalel</a>, <a href="http://academic.research.microsoft.com/Author/49905355">Ernest Knoll</a>, <a href="http://academic.research.microsoft.com/Author/10588291">Joseph Shor</a>, <a href="http://academic.research.microsoft.com/Author/3177747">Tsvika Kurts</a>, <a href="http://academic.research.microsoft.com/Author/47442452">Eran Altshuler</a>, <a href="http://academic.research.microsoft.com/Author/56504718">Eyal Fayneh</a>, <a href="http://academic.research.microsoft.com/Author/34065002">Kosta Luria</a>, <a href="http://academic.research.microsoft.com/Author/3336412">Michael Zelikson</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6044730">view publication</a></span></p><p>This paper describes the second-generation Intel Core processor, a 32-nm monolithic die integrating four IA cores, a processor graphics, and a memory controller. Special attention is given to the circuit design challenges associated with this kind of integration. The paper describes the chip floor plan, the power delivery network, energy conservation techniques, the clock generation and distribution, the ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 194-205, 2012</cite>]]></description></item><item><title>Design of the Two-Core x86-64 AMD “Bulldozer” Module in 32 nm SOI CMOS</title><link>http://academic.research.microsoft.com/Publication/56947224</link><pubDate>Mon, 20 May 2013 00:46:54 GMT</pubDate><guid isPermaLink="false">56947224</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/12606760">Hugh McIntyre</a>, <a href="http://academic.research.microsoft.com/Author/723627">Srikanth Arekapudi</a>, <a href="http://academic.research.microsoft.com/Author/1037186">Eric Busta</a>, <a href="http://academic.research.microsoft.com/Author/22190570">Timothy Fischer</a>, <a href="http://academic.research.microsoft.com/Author/49135189">Michael Golden</a>, <a href="http://academic.research.microsoft.com/Author/51585799">Aaron Horiuchi</a>, <a href="http://academic.research.microsoft.com/Author/51294865">Tom Meneghini</a>, <a href="http://academic.research.microsoft.com/Author/53496170">Samuel Naffziger</a>, <a href="http://academic.research.microsoft.com/Author/49337960">James Vinh</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6060836">view publication</a></span></p><p>This paper describes key circuit innovations in a new x86-64 micro-architecture AMD code-named “Bulldozer” , . It is implemented in 32 nm high-K metal gate SOI CMOS. It occupies 30.9 mm $^{2}$, contains 213 million transistors, reduces the number of F04 gates per cycle by more than 20% compared to a previous processor in the same technology , ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 164-176, 2012</cite>]]></description></item><item><title>Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM</title><link>http://academic.research.microsoft.com/Publication/57012515</link><pubDate>Mon, 20 May 2013 00:46:53 GMT</pubDate><guid isPermaLink="false">57012515</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/56746621">Yen-Huei Chen</a>, <a href="http://academic.research.microsoft.com/Author/22335302">Shao-Yu Chou</a>, <a href="http://academic.research.microsoft.com/Author/47562811">Quincy Li</a>, <a href="http://academic.research.microsoft.com/Author/54986810">Wei-Min Chan</a>, <a href="http://academic.research.microsoft.com/Author/44213663">Dar Sun</a>, <a href="http://academic.research.microsoft.com/Author/10222079">Hung-Jen Liao</a>, <a href="http://academic.research.microsoft.com/Author/47661337">Ping Wang</a>, <a href="http://academic.research.microsoft.com/Author/248452">Meng-Fan Chang</a>, <a href="http://academic.research.microsoft.com/Author/790429">Hiroyuki Yamauchi</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6151870">view publication</a></span></p><p>This paper proposes schemes for the direct measurement of bit-line (BL) voltage swing, sense amplifier (SA) offset voltage, and word-line (WL) pulse width, demonstrated in a 40 nm CMOS 32 kb fully functional SRAM macro with $&amp;lt; $2% area penalty. This is the first such scheme to enable the optimal tuning of WL-pulse (WLP) width according to ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 969-980, 2012</cite>]]></description></item><item><title>A 2.6 mW/Gbps 12.5 Gbps RX With 8Tap Switched-Capacitor DFE in 32 nm CMOS</title><link>http://academic.research.microsoft.com/Publication/57012536</link><pubDate>Mon, 20 May 2013 00:46:52 GMT</pubDate><guid isPermaLink="false">57012536</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/291782">Thomas Toifl</a>, <a href="http://academic.research.microsoft.com/Author/12652673">Christian Menolfi</a>, <a href="http://academic.research.microsoft.com/Author/22322410">Michael Ruegg</a>, <a href="http://academic.research.microsoft.com/Author/56453767">Robert Reutemann</a>, <a href="http://academic.research.microsoft.com/Author/3071896">Daniel Dreps</a>, <a href="http://academic.research.microsoft.com/Author/12652989">Troy Beukema</a>, <a href="http://academic.research.microsoft.com/Author/2214194">Andrea Prati</a>, <a href="http://academic.research.microsoft.com/Author/55464143">Daniele Gardellini</a>, <a href="http://academic.research.microsoft.com/Author/12652675">Marcel Kossel</a>, <a href="http://academic.research.microsoft.com/Author/12664972">Peter Buchmann</a>, <a href="http://academic.research.microsoft.com/Author/50782056">Matthias Brandli</a>, <a href="http://academic.research.microsoft.com/Author/667015">Pier Andrea Francese</a>, <a href="http://academic.research.microsoft.com/Author/625043">Thomas Morf</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6169954">view publication</a></span></p><p>A low-power receiver circuit in 32 nm SOI CMOS is presented, which is intended to be used in a source-synchronous link configuration. The design of the receiver was optimized for power owing to the assumption that a link protocol enables a periodic calibration during which the circuit does not have to deliver valid data. In addition, it is ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 897-910, 2012</cite>]]></description></item><item><title>A Low-Power, High-Fidelity Stereo Audio Codec in 0.13 $\mu$m CMOS</title><link>http://academic.research.microsoft.com/Publication/57014844</link><pubDate>Mon, 20 May 2013 00:46:51 GMT</pubDate><guid isPermaLink="false">57014844</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/36489283">Xicheng Jiang</a>, <a href="http://academic.research.microsoft.com/Author/9594508">Jungwoo Song</a>, <a href="http://academic.research.microsoft.com/Author/3514455">Jianlong Chen</a>, <a href="http://academic.research.microsoft.com/Author/47533509">Vinay Chandrasekar</a>, <a href="http://academic.research.microsoft.com/Author/2040480">Sherif Galal</a>, <a href="http://academic.research.microsoft.com/Author/47168344">Felix Y. L. Cheung</a>, <a href="http://academic.research.microsoft.com/Author/56480341">Darwin Cheung</a>, <a href="http://academic.research.microsoft.com/Author/50792761">Todd L. Brooks</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6156480">view publication</a></span></p><p>A 1.5 V low-power stereo audio codec in 0.13 $\mu$m CMOS is described. The microphone path includes a programmable gain stage with an enhanced transconductance cell followed by a continuous-time $\Sigma \Delta $ ADC with capacitive feed-forward and capacitive direct feedback. The speaker path employs a 1 mA Class-AB speaker amplifier with an improved ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1221-1231, 2012</cite>]]></description></item><item><title>A 64 Mb SRAM in 32 nm High-k Metal-Gate SOI Technology With 0.7 V Operation Enabled by Stability, Write-Ability and ReadAbility Enhancements</title><link>http://academic.research.microsoft.com/Publication/56947222</link><pubDate>Mon, 20 May 2013 00:46:50 GMT</pubDate><guid isPermaLink="false">56947222</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/1593836">Harold Pilo</a>, <a href="http://academic.research.microsoft.com/Author/47562934">Igor Arsovsi</a>, <a href="http://academic.research.microsoft.com/Author/21872931">Kevin Batson</a>, <a href="http://academic.research.microsoft.com/Author/22334542">Geordie Braceras</a>, <a href="http://academic.research.microsoft.com/Author/22335074">John Gabric</a>, <a href="http://academic.research.microsoft.com/Author/2588877">Robert Houle</a>, <a href="http://academic.research.microsoft.com/Author/10511227">Steve Lamphier</a>, <a href="http://academic.research.microsoft.com/Author/17974090">Carl Radens</a>, <a href="http://academic.research.microsoft.com/Author/49294090">Adnan Seferagic</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6033050">view publication</a></span></p><p>A 64 Mb SRAM macro has been fabricated in a 32 nm high-k metal-gate SOI technology. The SRAM features a 0.154 $\mu\hbox{m}^{2}$ bit-cell, the smallest to date for a 32 nm SOI product. A 0.7 V ${\rm VDD}_{\rm MIN}$ operation is enabled by three assist features. Stability is improved by a ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 97-106, 2012</cite>]]></description></item><item><title>An 8x 10Gb/s Source-Synchronous I/O System Based on High-Density Silicon Carrier Interconnects</title><link>http://academic.research.microsoft.com/Publication/57012537</link><pubDate>Mon, 20 May 2013 00:46:49 GMT</pubDate><guid isPermaLink="false">57012537</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/397089">Timothy O. Dickson</a>, <a href="http://academic.research.microsoft.com/Author/56339795">Yong Liu</a>, <a href="http://academic.research.microsoft.com/Author/10612923">Sergey V. Rylov</a>, <a href="http://academic.research.microsoft.com/Author/1356645">Bing Dang</a>, <a href="http://academic.research.microsoft.com/Author/49123925">Cornelia K. Tsang</a>, <a href="http://academic.research.microsoft.com/Author/3548149">Paul S. Andry</a>, <a href="http://academic.research.microsoft.com/Author/449290">John F. Bulzacchelli</a>, <a href="http://academic.research.microsoft.com/Author/10646662">Herschel A. Ainspan</a>, <a href="http://academic.research.microsoft.com/Author/13387866">Xiaoxiong Gu</a>, <a href="http://academic.research.microsoft.com/Author/55666670">Lavanya Turlapati</a>, <a href="http://academic.research.microsoft.com/Author/12662537">Michael P. Beakes</a>, <a href="http://academic.research.microsoft.com/Author/24809410">Benjamin D. Parker</a>, <a href="http://academic.research.microsoft.com/Author/18014966">John U. Knickerbocker</a>, <a href="http://academic.research.microsoft.com/Author/12619329">Daniel J. Friedman</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06173089">view publication</a></span></p><p>A source synchronous I/O system based on high-density silicon carrier interconnects is introduced. Benefiting from the advantages of advanced silicon packaging technologies, the system uses 50 $\mu$m-pitch $\mu$C4s to reduce I/O cell size and fine-pitch interconnects on silicon carrier to achieve record-breaking interconnect density. An I/O architecture is introduced with link ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 884-896, 2012</cite>]]></description></item><item><title>A Differential Digitally Controlled Crystal Oscillator With a 14Bit Tuning Resolution and Sine Wave Outputs for Cellular Applications</title><link>http://academic.research.microsoft.com/Publication/57022693</link><pubDate>Mon, 20 May 2013 00:46:48 GMT</pubDate><guid isPermaLink="false">57022693</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/53625518">Yuyu Chang</a>, <a href="http://academic.research.microsoft.com/Author/163092">John Leete</a>, <a href="http://academic.research.microsoft.com/Author/12623434">Zhimin Zhou</a>, <a href="http://academic.research.microsoft.com/Author/10610088">Morteza Vadipour</a>, <a href="http://academic.research.microsoft.com/Author/47614152">Yin-Ting Chang</a>, <a href="http://academic.research.microsoft.com/Author/47243373">Hooman Darabi</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06084688">view publication</a></span></p><p>This paper describes the design topologies and considerations of a differential sinusoidal-output digitally controlled crystal oscillator (DCXO) intended for use in cellular applications. The oscillator has a fine-tuning range of ${\pm}$44 ppm, approximately 14 bits of resolution, and an average step size of 0.005 ppm. All signals connecting externally to I/O pins are sine waves ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 2, pp. 421-434, 2012</cite>]]></description></item><item><title>An Embedded Dynamic Voltage Scaling (DVS) System Through 55 nm Single-Inductor Dual-Output (SIDO) Switching Converter for 12Bit Video Digital-to-Analog Converter</title><link>http://academic.research.microsoft.com/Publication/57020103</link><pubDate>Mon, 20 May 2013 00:46:47 GMT</pubDate><guid isPermaLink="false">57020103</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3575638">Wen-Shen Chou</a>, <a href="http://academic.research.microsoft.com/Author/3498385">Tzu-Chi Huang</a>, <a href="http://academic.research.microsoft.com/Author/3534461">Yu-Huei Lee</a>, <a href="http://academic.research.microsoft.com/Author/55198796">Yao-Yi Yang</a>, <a href="http://academic.research.microsoft.com/Author/56872848">Yi-Ping Su</a>, <a href="http://academic.research.microsoft.com/Author/12731604">Ke-Horng Chen</a>, <a href="http://academic.research.microsoft.com/Author/25974556">Chen-Chih Huang</a>, <a href="http://academic.research.microsoft.com/Author/56488412">Ying-Hsi Lin</a>, <a href="http://academic.research.microsoft.com/Author/53508169">Chao-Cheng Lee</a>, <a href="http://academic.research.microsoft.com/Author/990534">Kuei-Ann Wen</a>, <a href="http://academic.research.microsoft.com/Author/22324466">Ying-Chih Hsu</a>, <a href="http://academic.research.microsoft.com/Author/55558004">Yung-Chow Peng</a>, <a href="http://academic.research.microsoft.com/Author/12627125">Fu-Lung Hsueh</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6222360">view publication</a></span></p><p>This paper proposes a 55 nm CMOS 12-bit current-steering video digital-to-analog converter (DAC) directly powered by the single-inductor dual-output (SIDO) switching converter to compose a dynamic voltage scaling (DVS) system and improve the power efficiency. Dual-DVS control in both digital and analog circuits can effectively reduce power consumption. With various supply voltages, the ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1568-1584, 2012</cite>]]></description></item><item><title>HermesE: A 96Channel Full Data Rate Direct Neural Interface in 0.13 $\mu$ m CMOS</title><link>http://academic.research.microsoft.com/Publication/57012527</link><pubDate>Mon, 20 May 2013 00:46:46 GMT</pubDate><guid isPermaLink="false">57012527</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/17924522">Hua Gao</a>, <a href="http://academic.research.microsoft.com/Author/56624184">Ross M. Walker</a>, <a href="http://academic.research.microsoft.com/Author/3833758">Paul Nuyujukian</a>, <a href="http://academic.research.microsoft.com/Author/12689748">Kofi A. A. Makinwa</a>, <a href="http://academic.research.microsoft.com/Author/1829644">Krishna V. Shenoy</a>, <a href="http://academic.research.microsoft.com/Author/10611567">Boris Murmann</a>, <a href="http://academic.research.microsoft.com/Author/54760432">Teresa H. Meng</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06158616">view publication</a></span></p><p>A power and area efficient sensor interface consumes 6.4 mW from 1.2 V while occupying 5 mm$\,\times\,$ 5 mm in 0.13 $\mu$ m CMOS. The interface offers simultaneous access to 96 channels of broadband neural data acquired from cortical microelectrodes as part of a head-mounted wireless recording system, enabling basic neuroscience as well as neuroprosthetics ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 1043-1055, 2012</cite>]]></description></item><item><title>A Low-Noise High Intrascene Dynamic Range CMOS Image Sensor With a 13 to 19b Variable-Resolution Column-Parallel Folding-Integration/Cyclic ADC</title><link>http://academic.research.microsoft.com/Publication/56947218</link><pubDate>Mon, 20 May 2013 00:46:45 GMT</pubDate><guid isPermaLink="false">56947218</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/56484459">Min-Woong Seo</a>, <a href="http://academic.research.microsoft.com/Author/47283910">Sung-Ho Suh</a>, <a href="http://academic.research.microsoft.com/Author/10524039">Tetsuya Iida</a>, <a href="http://academic.research.microsoft.com/Author/55894970">Taishi Takasawa</a>, <a href="http://academic.research.microsoft.com/Author/22320718">Keigo Isobe</a>, <a href="http://academic.research.microsoft.com/Author/47332247">Takashi Watanabe</a>, <a href="http://academic.research.microsoft.com/Author/22320347">Shinya Itoh</a>, <a href="http://academic.research.microsoft.com/Author/55275799">Keita Yasutomi</a>, <a href="http://academic.research.microsoft.com/Author/3387604">Shoji Kawahito</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6024457">view publication</a></span></p><p>A low temporal noise and high dynamic range CMOS image sensor is developed. A 1Mpixel CMOS image sensor with column-parallel folding-integration and cyclic ADCs has 80$~\mu\hbox{V}_{\rm rms}~(1.2{\rm e}^{-})$ temporal noise, 82 dB dynamic range using 64 samplings in the folding-integration ADC mode. Very high variable gray-scale resolution of 13b ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 272-283, 2012</cite>]]></description></item><item><title>A 12Bit 3 GS/s Pipeline ADC With 0.4 mm$^{2}$ and 500 mW in 40 nm Digital CMOS</title><link>http://academic.research.microsoft.com/Publication/57012530</link><pubDate>Mon, 20 May 2013 00:46:44 GMT</pubDate><guid isPermaLink="false">57012530</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/18141484">Chun-Ying Chen</a>, <a href="http://academic.research.microsoft.com/Author/1190204">Jiangfeng Wu</a>, <a href="http://academic.research.microsoft.com/Author/54158768">Juo-Jung Hung</a>, <a href="http://academic.research.microsoft.com/Author/7376008">Tianwei Li</a>, <a href="http://academic.research.microsoft.com/Author/2018003">Wenbo Liu</a>, <a href="http://academic.research.microsoft.com/Author/47402539">Wei-Ta Shih</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6161613">view publication</a></span></p><p>A 12-bit 3 GS/s 40 nm two-way time-interleaved pipeline analog-to-digital converter (ADC) is presented. The proposed adaptive power/ground architecture eliminates the headroom limitations due to the deeply scaled power supply in nanometer CMOS technologies, while preserving the intrinsic speed of thin-oxide MOSFETs with minimum channel length for key analog blocks. Moreover, in ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 1013-1021, 2012</cite>]]></description></item><item><title>A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology</title><link>http://academic.research.microsoft.com/Publication/57020806</link><pubDate>Mon, 20 May 2013 00:46:43 GMT</pubDate><guid isPermaLink="false">57020806</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/55514937">Marek Gersbach</a>, <a href="http://academic.research.microsoft.com/Author/53506577">Yuki Maruyama</a>, <a href="http://academic.research.microsoft.com/Author/53302726">Rahmadi Trimananda</a>, <a href="http://academic.research.microsoft.com/Author/22342888">Matt W. Fishburn</a>, <a href="http://academic.research.microsoft.com/Author/1576932">David Stoppa</a>, <a href="http://academic.research.microsoft.com/Author/47561911">Justin A. Richardson</a>, <a href="http://academic.research.microsoft.com/Author/55333650">Richard Walker</a>, <a href="http://academic.research.microsoft.com/Author/3796384">Robert Henderson</a>, <a href="http://academic.research.microsoft.com/Author/43041956">Edoardo Charbon</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06176268">view publication</a></span></p><p>We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 32$\times$32 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1394-1407, 2012</cite>]]></description></item><item><title>A 1.95 GHz Sub1 dB NF, +40 dBm OIP3 WCDMA LNA Module</title><link>http://academic.research.microsoft.com/Publication/57020102</link><pubDate>Mon, 20 May 2013 00:46:42 GMT</pubDate><guid isPermaLink="false">57020102</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/50860375">Jos Bergervoet</a>, <a href="http://academic.research.microsoft.com/Author/12652919">Domine M. W. Leenaerts</a>, <a href="http://academic.research.microsoft.com/Author/42400825">Gerben W. de Jong</a>, <a href="http://academic.research.microsoft.com/Author/18281788">Edwin van der Heijden</a>, <a href="http://academic.research.microsoft.com/Author/53714901">Jan-Willem Lobeek</a>, <a href="http://academic.research.microsoft.com/Author/52860775">Alexander Simin</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06222357">view publication</a></span></p><p>A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g., base stations will be demonstrated. The LNA is designed for WCDMA band II, i.e., 1.92–1.98 GHz, and reaches a 0.9 dB NF at 27 $^{\circ}$C and 1.2 dB at 65 $^{\circ}$C. A 0.1 dB NF improvement is obtained when the ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1672-1680, 2012</cite>]]></description></item><item><title>A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology</title><link>http://academic.research.microsoft.com/Publication/56946760</link><pubDate>Mon, 20 May 2013 00:46:41 GMT</pubDate><guid isPermaLink="false">56946760</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/1078508">Hyun-Woo Lee</a>, <a href="http://academic.research.microsoft.com/Author/17928209">Ki-Han Kim</a>, <a href="http://academic.research.microsoft.com/Author/56776487">Young-Kyoung Choi</a>, <a href="http://academic.research.microsoft.com/Author/49531885">Ju-Hwan Sohn</a>, <a href="http://academic.research.microsoft.com/Author/54820925">Nak-Kyu Park</a>, <a href="http://academic.research.microsoft.com/Author/52240862">Kwan-Weon Kim</a>, <a href="http://academic.research.microsoft.com/Author/1438651">Chulwoo Kim</a>, <a href="http://academic.research.microsoft.com/Author/51066675">Young-Jung Choi</a>, <a href="http://academic.research.microsoft.com/Author/50229158">Byong-Tae Chung</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06025220">view publication</a></span></p><p>A 512 Mbit consumer DDR2 SDRAM that uses self-dynamic voltage scaling (SDVS) and adaptive design techniques is introduced in this paper. With the increase in the significance of process variation, higher performance requirements reduce the allowable design margin in DRAM circuits. However, self-dynamic voltage scaling gives a greater timing margin in the circuitry by changing the internal supply ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 131-140, 2012</cite>]]></description></item><item><title>A Battery-Free 217 nW Static Control Power Buck Converter for Wireless RF Energy Harvesting With $\alpha $Calibrated Dynamic On/Off Time and Adaptive Phase Lead Control</title><link>http://academic.research.microsoft.com/Publication/57012520</link><pubDate>Mon, 20 May 2013 00:46:40 GMT</pubDate><guid isPermaLink="false">57012520</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3498385">Tzu-Chi Huang</a>, <a href="http://academic.research.microsoft.com/Author/21733101">Chun-Yu Hsieh</a>, <a href="http://academic.research.microsoft.com/Author/55198796">Yao-Yi Yang</a>, <a href="http://academic.research.microsoft.com/Author/3534461">Yu-Huei Lee</a>, <a href="http://academic.research.microsoft.com/Author/47617430">Yu-Chai Kang</a>, <a href="http://academic.research.microsoft.com/Author/12731604">Ke-Horng Chen</a>, <a href="http://academic.research.microsoft.com/Author/25974556">Chen-Chih Huang</a>, <a href="http://academic.research.microsoft.com/Author/56488412">Ying-Hsi Lin</a>, <a href="http://academic.research.microsoft.com/Author/21728697">Ming-Wei Lee</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6156477">view publication</a></span></p><p>A battery-free nano-power buck converter with a proposed dynamic on/off time (DOOT) control can achieve high conversion efficiency over a wide load range. The DOOT control can predict the on/off time at different input voltages without a power consuming zero current detection (ZCD) circuit, as well as suppress static power in idle periods. To adapt to ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 852-862, 2012</cite>]]></description></item><item><title>A Fully-Integrated High-Power Linear CMOS Power Amplifier With a ParallelSeries Combining Transformer</title><link>http://academic.research.microsoft.com/Publication/57024901</link><pubDate>Mon, 20 May 2013 00:46:39 GMT</pubDate><guid isPermaLink="false">57024901</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/53730412">Jihwan Kim</a>, <a href="http://academic.research.microsoft.com/Author/53486566">Woonyun Kim</a>, <a href="http://academic.research.microsoft.com/Author/56347851">Hamhee Jeon</a>, <a href="http://academic.research.microsoft.com/Author/53943311">Yan-Yu Huang</a>, <a href="http://academic.research.microsoft.com/Author/9143092">Youngchang Yoon</a>, <a href="http://academic.research.microsoft.com/Author/9490022">Hyungwook Kim</a>, <a href="http://academic.research.microsoft.com/Author/1521196">Chang-Ho Lee</a>, <a href="http://academic.research.microsoft.com/Author/43228944">Kevin T. Kornegay</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6146380">view publication</a></span></p><p>In this paper, a linear CMOS power amplifier (PA) with high output power (34-dBm saturated output power) for high data-rate mobile applications is introduced. The PA incorporates a parallel combination of four differential PA cores to generate high output power with good efficiency and linearity. To implement an efficient on-chip power combiner in a small form-factor, ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 3, pp. 599-614, 2012</cite>]]></description></item><item><title>A Fully-Integrated 40Gb/s Transceiver in 65-nm CMOS Technology</title><link>http://academic.research.microsoft.com/Publication/57024894</link><pubDate>Mon, 20 May 2013 00:46:38 GMT</pubDate><guid isPermaLink="false">57024894</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/50171597">Ming-Shuan Chen</a>, <a href="http://academic.research.microsoft.com/Author/56804943">Yu-Nan Shih</a>, <a href="http://academic.research.microsoft.com/Author/5610336">Chen-Lun Lin</a>, <a href="http://academic.research.microsoft.com/Author/55178686">Hao-Wei Hung</a>, <a href="http://academic.research.microsoft.com/Author/51300963">Jri Lee</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6117094">view publication</a></span></p><p>This paper introduces a fully-integrated wireline transceiver operating at 40 Gb/s. The transmitter incorporates a 5-tap finite-inpulse response (FIR) filter with LC-based delay lines precisely adjusted by a closed-loop delay controller. The receiver employs a similar 3-tap FIR filter as an equalizer front-end with digital adaptation, and a sub-rate clock and ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 3, pp. 627-640, 2012</cite>]]></description></item><item><title>A 0.018% THD+N, 88dB PSRR PWM Class-D Amplifier for Direct Battery Hookup</title><link>http://academic.research.microsoft.com/Publication/57022683</link><pubDate>Mon, 20 May 2013 00:46:37 GMT</pubDate><guid isPermaLink="false">57022683</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/21733124">Youngkil Choi</a>, <a href="http://academic.research.microsoft.com/Author/52001378">Wonho Tak</a>, <a href="http://academic.research.microsoft.com/Author/5463126">Younghyun Yoon</a>, <a href="http://academic.research.microsoft.com/Author/3343653">Jeongjin Roh</a>, <a href="http://academic.research.microsoft.com/Author/22193213">Sunwoo Kwon</a>, <a href="http://academic.research.microsoft.com/Author/35311">Jinseok Koh</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06070984">view publication</a></span></p><p>A low-distortion third-order class-D amplifier that is fully integrated into a 0.18-$\mu$ m CMOS process was designed for direct battery hookup in a mobile application. A class-D amplifier for direct battery hookup must have a sufficiently high power supply rejection ratio (PSRR) in preparation for noise, such as when a global system for mobile ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 2, pp. 454-463, 2012</cite>]]></description></item><item><title>Hierarchical, intelligent and automatic controls</title><link>http://academic.research.microsoft.com/Publication/59618226</link><pubDate>Mon, 20 May 2013 00:46:36 GMT</pubDate><guid isPermaLink="false">59618226</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/47837661">Schutter de B</a>, <a href="http://academic.research.microsoft.com/Author/47751425">J Ploeg</a>, <a href="http://academic.research.microsoft.com/Author/3693117">L D Baskar</a>, <a href="http://academic.research.microsoft.com/Author/47301483">GJL Naus</a>, <a href="http://academic.research.microsoft.com/Author/16814884">H Nijmeijer</a><span style="margin-left:20px" /><span style="margin-left:20px"></span></p><p /><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, 2012</cite>]]></description></item><item><title>Introduction to the Special Issue on the 2011 IEEE International Solid-State Circuits Conference</title><link>http://academic.research.microsoft.com/Publication/56946770</link><pubDate>Mon, 20 May 2013 00:46:35 GMT</pubDate><guid isPermaLink="false">56946770</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/47166958">Alice Wang</a>, <a href="http://academic.research.microsoft.com/Author/24367797">Ken Takeuchi</a>, <a href="http://academic.research.microsoft.com/Author/1210444">Tanay Karnik</a>, <a href="http://academic.research.microsoft.com/Author/1832026">Maysam Ghovanloo</a>, <a href="http://academic.research.microsoft.com/Author/1252228">Satoshi Shigematsu</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6081954">view publication</a></span></p><p /><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 3-7, 2012</cite>]]></description></item><item><title>RF-to-Baseband Digitization in 40 nm CMOS With RF Bandpass $\Delta\Sigma$ Modulator and Polyphase Decimation Filter</title><link>http://academic.research.microsoft.com/Publication/57012521</link><pubDate>Mon, 20 May 2013 00:46:34 GMT</pubDate><guid isPermaLink="false">57012521</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3354178">Ewout Martens</a>, <a href="http://academic.research.microsoft.com/Author/2961988">André Bourdoux</a>, <a href="http://academic.research.microsoft.com/Author/3587466">Aissa Couvreur</a>, <a href="http://academic.research.microsoft.com/Author/4757290">Robert Fasthuber</a>, <a href="http://academic.research.microsoft.com/Author/3499081">Peter Van Wesemael</a>, <a href="http://academic.research.microsoft.com/Author/249252">Geert Van der Plas</a>, <a href="http://academic.research.microsoft.com/Author/12541672">Jan Craninckx</a>, <a href="http://academic.research.microsoft.com/Author/3582874">Julien Ryckaert</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06156481">view publication</a></span></p><p>A fourth-order continuous-time RF bandpass $\Delta\Sigma$ ADC has been fabricated in 40 nm CMOS for $f_s/4$ operation around a 2.22 GHz central frequency. A complete system has been implemented on the test chip including the ADC core, the fractional-N PLL with clock generation network, and the digital decimation filters and downconversion (DFD). The ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 990-1002, 2012</cite>]]></description></item><item><title>Magnetic Relaxation Detector for Microbead Labels</title><link>http://academic.research.microsoft.com/Publication/57012528</link><pubDate>Mon, 20 May 2013 00:46:33 GMT</pubDate><guid isPermaLink="false">57012528</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/28907326">Paul Peng Liu</a>, <a href="http://academic.research.microsoft.com/Author/49297337">Karl Skucha</a>, <a href="http://academic.research.microsoft.com/Author/56776170">Yida Duan</a>, <a href="http://academic.research.microsoft.com/Author/43198899">Mischa Megens</a>, <a href="http://academic.research.microsoft.com/Author/13022229">Jungkyu Kim</a>, <a href="http://academic.research.microsoft.com/Author/35448745">Igor I. Izyumin</a>, <a href="http://academic.research.microsoft.com/Author/18191622">Simone Gambini</a>, <a href="http://academic.research.microsoft.com/Author/55698172">Bernhard Boser</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6158617">view publication</a></span></p><p>A compact and robust magnetic label detector for biomedical assays is implemented in 0.18-$\mu$ m CMOS. Detection relies on the magnetic relaxation signature of a microbead label for improved tolerance to environmental variations and relaxed dynamic range requirement, eliminating the need for baseline calibration and reference sensors. The device includes embedded electromagnets to eliminate external magnets and reduce ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 1056-1064, 2012</cite>]]></description></item><item><title>Silicon Photonic Switches Hybrid-Integrated With CMOS Drivers</title><link>http://academic.research.microsoft.com/Publication/56947230</link><pubDate>Mon, 20 May 2013 00:46:32 GMT</pubDate><guid isPermaLink="false">56947230</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/1780105">Alexander V. Rylyakov</a>, <a href="http://academic.research.microsoft.com/Author/1245989">Clint L. Schow</a>, <a href="http://academic.research.microsoft.com/Author/3555236">Benjamin G. Lee</a>, <a href="http://academic.research.microsoft.com/Author/12972662">William M. J. Green</a>, <a href="http://academic.research.microsoft.com/Author/3046312">Solomon Assefa</a>, <a href="http://academic.research.microsoft.com/Author/1336679">Fuad E. Doany</a>, <a href="http://academic.research.microsoft.com/Author/47561555">Min Yang</a>, <a href="http://academic.research.microsoft.com/Author/49873916">Joris Van Campenhout</a>, <a href="http://academic.research.microsoft.com/Author/41843008">Christopher V. Jahnes</a>, <a href="http://academic.research.microsoft.com/Author/1410577">Jeffrey A. Kash</a>, <a href="http://academic.research.microsoft.com/Author/12803562">Yurii A. Vlasov</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06071021">view publication</a></span></p><p>This paper describes the design and measured performance of three different silicon photonic switches: a 2$\,\times\,$ 2 switch, a 1$\,\times\,$ 2 switch, and a 4$\,\times\,$ 4 switch. All of the devices have been hybrid integrated with a corresponding custom 90-nm CMOS driver. The 2 $\,\times\,$2 switch is based on a wavelength-insensitive Mach–Zehnder interferometer (...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 345-354, 2012</cite>]]></description></item><item><title>A Transformer-Combined 31.5 dBm Outphasing Power Amplifier in 45 nm LP CMOS With Dynamic Power Control for Back-Off Power Efficiency Enhancement</title><link>http://academic.research.microsoft.com/Publication/57020107</link><pubDate>Mon, 20 May 2013 00:46:31 GMT</pubDate><guid isPermaLink="false">57020107</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/19046953">Wei Tai</a>, <a href="http://academic.research.microsoft.com/Author/17991227">Hongtao Xu</a>, <a href="http://academic.research.microsoft.com/Author/22334057">Ashoke Ravi</a>, <a href="http://academic.research.microsoft.com/Author/42219544">Hasnain Lakdawala</a>, <a href="http://academic.research.microsoft.com/Author/244924">Ofir Bochobza-Degani</a>, <a href="http://academic.research.microsoft.com/Author/212782">L. Richard Carley</a>, <a href="http://academic.research.microsoft.com/Author/22334056">Yorgos Palaskas</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6222368">view publication</a></span></p><p>A transformer-combined fully integrated outphasing class-D PA in 45 nm LP CMOS achieves 31.5 dBm peak output power at 2.4 GHz with 27% peak PAE, and supports over 86 dB of output power range. The PA employs dynamic power control (DPC) whereby sections of the PA are turned on or off dynamically according to the instantaneous ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1646-1658, 2012</cite>]]></description></item><item><title>A 10-b 320MS/s Stage-Gain-Error Self-Calibration Pipeline ADC</title><link>http://academic.research.microsoft.com/Publication/57020815</link><pubDate>Mon, 20 May 2013 00:46:30 GMT</pubDate><guid isPermaLink="false">57020815</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/50478011">Chien-Jian Tseng</a>, <a href="http://academic.research.microsoft.com/Author/826172">Hung-Wei Chen</a>, <a href="http://academic.research.microsoft.com/Author/19468696">Wei-Ting Shen</a>, <a href="http://academic.research.microsoft.com/Author/56439766">Wei-Chih Cheng</a>, <a href="http://academic.research.microsoft.com/Author/12661419">Hsin-Shu Chen</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6188519">view publication</a></span></p><p>A 10-b 320-MS/s pipeline analog-to-digital converter (ADC) with low dc gain opamps, as low as 30.6 dB based on simulations, in its multiplying digital-to-analog converters (MDACs) is presented. A foreground self-calibration technique is proposed to reduce stage gain error by adjusting feedback factor with a calibration capacitor array. The prototype in ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1334-1343, 2012</cite>]]></description></item><item><title>A Fully-Integrated 3Level DC-DC Converter for Nanosecond-Scale DVFS</title><link>http://academic.research.microsoft.com/Publication/56946771</link><pubDate>Mon, 20 May 2013 00:46:29 GMT</pubDate><guid isPermaLink="false">56946771</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/47580816">Wonyoung Kim</a>, <a href="http://academic.research.microsoft.com/Author/291934">David Brooks</a>, <a href="http://academic.research.microsoft.com/Author/1515">Gu-Yeon Wei</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6084810">view publication</a></span></p><p>On-chip DC-DC converters have the potential to offer fine-grain power management in modern chip-multiprocessors. This paper presents a fully integrated 3-level DC-DC converter, a hybrid of buck and switched-capacitor converters, implemented in 130 nm CMOS technology. The 3-level converter enables smaller inductors (1 nH) than a buck, while generating a wide range ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 206-219, 2012</cite>]]></description></item><item><title>Analysis and Design of a High Speed Continuous-time $\Delta\Sigma$ Modulator Using the Assisted Opamp Technique</title><link>http://academic.research.microsoft.com/Publication/57020084</link><pubDate>Mon, 20 May 2013 00:46:28 GMT</pubDate><guid isPermaLink="false">57020084</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/56484476">Ankesh Jain</a>, <a href="http://academic.research.microsoft.com/Author/42872010">Muthusubramaniam Venkatesan</a>, <a href="http://academic.research.microsoft.com/Author/12619642">Shanthi Pavan</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06190724">view publication</a></span></p><p>We apply the “assisted opamp technique” to the design of a 1 GS/s single-bit continuous-time $\Delta\Sigma$ modulator (CTDSM) that achieves 10 bit resolution in 15.625 MHz bandwidth. The enhanced linearity and speed of the first integrator of the modulator, necessitated by single-bit operation, are obtained in a power efficient manner using opamp assistance. However, ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1615-1625, 2012</cite>]]></description></item><item><title>A 7Bit 18th Order 9.6 GS/s FIR Up-Sampling Filter for High Data Rate 60GHz Wireless Transmitters</title><link>http://academic.research.microsoft.com/Publication/57020106</link><pubDate>Mon, 20 May 2013 00:46:27 GMT</pubDate><guid isPermaLink="false">57020106</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/54185270">Jonathan Muller</a>, <a href="http://academic.research.microsoft.com/Author/12660903">Bruno Stefanelli</a>, <a href="http://academic.research.microsoft.com/Author/18459405">Antoine Frappe</a>, <a href="http://academic.research.microsoft.com/Author/7845987">Lu Ye</a>, <a href="http://academic.research.microsoft.com/Author/18183861">Andreia Cathelin</a>, <a href="http://academic.research.microsoft.com/Author/550996">Ali Niknejad</a>, <a href="http://academic.research.microsoft.com/Author/21155416">Andreas Kaiser</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06222364">view publication</a></span></p><p>This paper presents the design and measurement of a 4 $\times$ oversampled 18th order digital low-pass FIR filter. It is a key building block in the proposed digitally enhanced transmitter architecture for 60 GHz wireless high-data rate links. Spectrum mask requirements are fully satisfied for OFDM modulated signals without requiring additional analog filtering. Pipelined CPL adders and TSPC ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1743-1756, 2012</cite>]]></description></item><item><title>Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses</title><link>http://academic.research.microsoft.com/Publication/57014839</link><pubDate>Mon, 20 May 2013 00:46:26 GMT</pubDate><guid isPermaLink="false">57014839</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/53615353">Laurent Negre</a>, <a href="http://academic.research.microsoft.com/Author/47410857">David Roy</a>, <a href="http://academic.research.microsoft.com/Author/56486780">Florian Cacho</a>, <a href="http://academic.research.microsoft.com/Author/12712254">Patrick Scheer</a>, <a href="http://academic.research.microsoft.com/Author/55731445">Sebastien Jan</a>, <a href="http://academic.research.microsoft.com/Author/1779602">Samuel Boret</a>, <a href="http://academic.research.microsoft.com/Author/172480">Daniel Gloria</a>, <a href="http://academic.research.microsoft.com/Author/47562450">Gérard Ghibaudo</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6155064">view publication</a></span></p><p>In the framework of MOSFET reliability for RF/AMS applications, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stresses with DC and RF aging characterization, is presented. Degradation kinetics of main parameters are physically explained and modeled using PSP compact model to predict the behavior of stressed devices.</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1075-1083, 2012</cite>]]></description></item><item><title>An Energy-Efficient 15Bit Capacitive-Sensor Interface Based on Period Modulation</title><link>http://academic.research.microsoft.com/Publication/57020093</link><pubDate>Mon, 20 May 2013 00:46:25 GMT</pubDate><guid isPermaLink="false">57020093</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/56101277">Zhichao Tan</a>, <a href="http://academic.research.microsoft.com/Author/47621101">Saleh Heidary Shalmany</a>, <a href="http://academic.research.microsoft.com/Author/12660550">Gerard C. M. Meijer</a>, <a href="http://academic.research.microsoft.com/Author/12735046">Michiel A. P. Pertijs</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6193184">view publication</a></span></p><p>This paper presents an energy-efficient capacitive-sensor interface with a period-modulated output signal. This interface converts the sensor capacitance to a time interval, which can be easily digitized by a simple digital counter. It is based on a relaxation oscillator consisting of an integrator and a comparator. To enable the use of a current-efficient telescopic OTA in ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1703-1711, 2012</cite>]]></description></item><item><title>A Neural Stimulator Frontend With High-Voltage Compliance and Programmable Pulse Shape for Epiretinal Implants</title><link>http://academic.research.microsoft.com/Publication/56947219</link><pubDate>Mon, 20 May 2013 00:46:24 GMT</pubDate><guid isPermaLink="false">56947219</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/49282656">Emilia Noorsal</a>, <a href="http://academic.research.microsoft.com/Author/18229459">Kriangkrai Sooksood</a>, <a href="http://academic.research.microsoft.com/Author/56635059">Hongcheng Xu</a>, <a href="http://academic.research.microsoft.com/Author/24618105">Ralf Hornig</a>, <a href="http://academic.research.microsoft.com/Author/23696192">Joachim Becker</a>, <a href="http://academic.research.microsoft.com/Author/3513887">Maurits Ortmanns</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06025221">view publication</a></span></p><p>This paper presents an integrated neural stimulator with highly efficient and flexible frontend which is intended for an epiretinal implant with 1024 electrodes. It features programmable stimulation pulse shapes, a high-voltage (HV) output driver with compliance monitor for supply voltage adaptation, active and passive charge balancers, and electrode impedance measurement. Area and power efficiency is achieved by global timing ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 244-256, 2012</cite>]]></description></item><item><title>A 100-V AC Energy Meter Integrating 20-V Organic CMOS Digital and Analog Circuits With a Floating Gate for Process Variation Compensation and a 100-V Organic pMOS Rectifier</title><link>http://academic.research.microsoft.com/Publication/56946767</link><pubDate>Mon, 20 May 2013 00:46:23 GMT</pubDate><guid isPermaLink="false">56946767</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/17993483">Koichi Ishida</a>, <a href="http://academic.research.microsoft.com/Author/3564023">Tsung-Ching Huang</a>, <a href="http://academic.research.microsoft.com/Author/56446349">Kentaro Honda</a>, <a href="http://academic.research.microsoft.com/Author/12627749">Tsuyoshi Sekitani</a>, <a href="http://academic.research.microsoft.com/Author/54688679">Hiroyoshi Nakajima</a>, <a href="http://academic.research.microsoft.com/Author/47243359">Hiroki Maeda</a>, <a href="http://academic.research.microsoft.com/Author/19016241">Makoto Takamiya</a>, <a href="http://academic.research.microsoft.com/Author/841880">Takao Someya</a>, <a href="http://academic.research.microsoft.com/Author/43153029">Takayasu Sakurai</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06070983">view publication</a></span></p><p>A 100-V ac energy meter based on the system-on- a-film (SoF) concept, in which various devices are integrated on a flexible film, is presented. The system consists of 20-V organic CMOS digital and analog circuits with a floating gate (FG) for process variation compensation, 100-V organic pMOS rectifiers for generating a 50-Hz clock and ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 301-309, 2012</cite>]]></description></item><item><title>A 3.3 V 6Bit 100 kS/s Current-Steering Digital-to-Analog Converter Using Organic P-Type Thin-Film Transistors on Glass</title><link>http://academic.research.microsoft.com/Publication/56947231</link><pubDate>Mon, 20 May 2013 00:46:22 GMT</pubDate><guid isPermaLink="false">56947231</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/49633354">Tarek Zaki</a>, <a href="http://academic.research.microsoft.com/Author/50016511">Frederik Ante</a>, <a href="http://academic.research.microsoft.com/Author/13039410">Ute Zschieschang</a>, <a href="http://academic.research.microsoft.com/Author/45933792">Joerg Butschke</a>, <a href="http://academic.research.microsoft.com/Author/21863519">Florian Letzkus</a>, <a href="http://academic.research.microsoft.com/Author/1823591">Harald Richter</a>, <a href="http://academic.research.microsoft.com/Author/42392276">Hagen Klauk</a>, <a href="http://academic.research.microsoft.com/Author/1549552">Joachim N. Burghartz</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6071022">view publication</a></span></p><p>A 3.3 V 6-bit binary-weighted current-steering digital-to-converter converter (DAC) using low-voltage organic p-type thin-film transistors (OTFTs) is presented. The converter marks records in speed and compactness owing to an OTFT fabrication process that is based on high-resolution silicon stencil masks. The chip has been fabricated on a glass substrate and ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 292-300, 2012</cite>]]></description></item><item><title>32.9 nV/rt Hz ${-}$60.6 dB THD Dual-Band MicroElectrode Array Signal Acquisition IC</title><link>http://academic.research.microsoft.com/Publication/57014848</link><pubDate>Mon, 20 May 2013 00:46:21 GMT</pubDate><guid isPermaLink="false">57014848</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/47404711">Jing Guo</a>, <a href="http://academic.research.microsoft.com/Author/3513954">Jie Yuan</a>, <a href="http://academic.research.microsoft.com/Author/54950784">Jiageng Huang</a>, <a href="http://academic.research.microsoft.com/Author/55761392">Jessica Ka-Yan Law</a>, <a href="http://academic.research.microsoft.com/Author/26711473">Chi-Kong Yeung</a>, <a href="http://academic.research.microsoft.com/Author/733140">Mansun Chan</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06165674">view publication</a></span></p><p>The dual-band recording of the local-field potential (LFP, 0.1–200 Hz) and the spike potential (SP, 200 Hz–10 kHz) is important for physiological studies at the cellular level. Recent study shows that the LFP signal plays important roles in modulating many profound cellular mechanisms. Although various bio-signal acquisition circuits have been reported over the years, ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1209-1220, 2012</cite>]]></description></item><item><title>A Super-Pipelined Energy Efficient Subthreshold 240 MS/s FFT Core in 65 nm CMOS</title><link>http://academic.research.microsoft.com/Publication/56946765</link><pubDate>Mon, 20 May 2013 00:46:20 GMT</pubDate><guid isPermaLink="false">56946765</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/56782232">Dongsuk Jeon</a>, <a href="http://academic.research.microsoft.com/Author/3564016">Mingoo Seok</a>, <a href="http://academic.research.microsoft.com/Author/1144965">Chaitali Chakrabarti</a>, <a href="http://academic.research.microsoft.com/Author/590262">David Blaauw</a>, <a href="http://academic.research.microsoft.com/Author/1271988">Dennis Sylvester</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06069820">view publication</a></span></p><p>This paper proposes a design approach targeting circuits operating at extremely low supply voltages, with the goal of reducing the voltage at which energy is minimized, thereby improving the achievable energy efficiency of the circuit. The proposed methods accomplish this by minimizing the circuit's ratio of leakage to active current. The first method, super pipelining, increases the number of ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 23-34, 2012</cite>]]></description></item><item><title>A 3-$\mu\hbox{W}$ CMOS Glucose Sensor for Wireless Contact-Lens Tear Glucose Monitoring</title><link>http://academic.research.microsoft.com/Publication/56947229</link><pubDate>Mon, 20 May 2013 00:46:19 GMT</pubDate><guid isPermaLink="false">56947229</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/12734151">Yu-Te Liao</a>, <a href="http://academic.research.microsoft.com/Author/56697095">Huanfen Yao</a>, <a href="http://academic.research.microsoft.com/Author/35128189">Andrew Lingley</a>, <a href="http://academic.research.microsoft.com/Author/824206">Babak Parviz</a>, <a href="http://academic.research.microsoft.com/Author/12663312">Brian P. Otis</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6071020">view publication</a></span></p><p>This paper presents a noninvasive wireless sensor platform for continuous health monitoring. The sensor system integrates a loop antenna, wireless sensor interface chip, and glucose sensor on a polymer substrate. The IC consists of power management, readout circuitry, wireless communication interface, LED driver, and energy storage capacitors in a 0.36- ${\hbox {mm}}^{2}$ CMOS chip with no external components. ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 335-344, 2012</cite>]]></description></item><item><title>A Fully-Integrated Efficient CMOS Inverse Class-D Power Amplifier for Digital Polar Transmitters</title><link>http://academic.research.microsoft.com/Publication/57014849</link><pubDate>Mon, 20 May 2013 00:46:18 GMT</pubDate><guid isPermaLink="false">57014849</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/13470236">Debopriyo Chowdhury</a>, <a href="http://academic.research.microsoft.com/Author/52848680">Siva V. Thyagarajan</a>, <a href="http://academic.research.microsoft.com/Author/7845987">Lu Ye</a>, <a href="http://academic.research.microsoft.com/Author/2853264">Elad Alon</a>, <a href="http://academic.research.microsoft.com/Author/550996">Ali M. Niknejad</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6170902">view publication</a></span></p><p>In this work, we have demonstrated a fully-integrated, high-efficiency CMOS inverse Class-D PA. Such efficient switching amplifiers can form the core of mixed-signal polar transmitters. A comprehensive analytical framework has been developed to determine optimum component values to maximize efficiency. Operating from a 1-V supply, the PA achieves a peak efficiency of 44% without any ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1113-1122, 2012</cite>]]></description></item><item><title>Startup Techniques for 95 mV Step-Up Converter by Capacitor Pass-On Scheme and ${\rm V}_{\rm TH}$Tuned Oscillator With Fixed Charge Programming</title><link>http://academic.research.microsoft.com/Publication/57014842</link><pubDate>Mon, 20 May 2013 00:46:17 GMT</pubDate><guid isPermaLink="false">57014842</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/437592">Po-Hung Chen</a>, <a href="http://academic.research.microsoft.com/Author/17993483">Koichi Ishida</a>, <a href="http://academic.research.microsoft.com/Author/44430613">Katsuyuki Ikeuchi</a>, <a href="http://academic.research.microsoft.com/Author/53207066">Xin Zhang</a>, <a href="http://academic.research.microsoft.com/Author/56446349">Kentaro Honda</a>, <a href="http://academic.research.microsoft.com/Author/55443788">Yasuyuki Okuma</a>, <a href="http://academic.research.microsoft.com/Author/34087853">Yoshikatsu Ryu</a>, <a href="http://academic.research.microsoft.com/Author/19016241">Makoto Takamiya</a>, <a href="http://academic.research.microsoft.com/Author/43153029">Takayasu Sakurai</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6156478">view publication</a></span></p><p>This paper presents a 95 mV startup-voltage step-up DC-DC converter for energy harvesting applications. The capacitor pass-on scheme enables operation of the system from an input voltage of 95 mV without using additional off-chip components. To compensate for the die-to-die process variation, post-fabrication threshold voltage $({\rm V}_{\rm TH})$ trimming is applied ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1252-1260, 2012</cite>]]></description></item><item><title>A 0.8–2 GHz Fully-Integrated QPLL-Timed Direct-RF-Sampling Bandpass $\Sigma \Delta$ ADC in 0.13 $\mu$m CMOS</title><link>http://academic.research.microsoft.com/Publication/57014843</link><pubDate>Mon, 20 May 2013 00:46:16 GMT</pubDate><guid isPermaLink="false">57014843</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3574012">Subhanshu Gupta</a>, <a href="http://academic.research.microsoft.com/Author/2778584">Daibashish Gangopadhyay</a>, <a href="http://academic.research.microsoft.com/Author/42219544">Hasnain Lakdawala</a>, <a href="http://academic.research.microsoft.com/Author/1795624">Jacques C. Rudell</a>, <a href="http://academic.research.microsoft.com/Author/255799">David J. Allstot</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06156479">view publication</a></span></p><p>A reconfigurable bandpass continuous-time $\Sigma \Delta$ RF ADC tunable over the 0.8–2 GHz frequency range is presented. System- and circuit-level innovations provide low power consumption and reduced circuit complexity. The proposed architecture operates in both the first- and second-Nyquist zones to enable a wide tuning range from a fixed sampling frequency of 3.2 GHz. ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1141-1153, 2012</cite>]]></description></item><item><title>Electronic Temperature Compensation of Lateral Bulk Acoustic Resonator Reference Oscillators Using Enhanced Series Tuning Technique</title><link>http://academic.research.microsoft.com/Publication/57020821</link><pubDate>Mon, 20 May 2013 00:46:15 GMT</pubDate><guid isPermaLink="false">57020821</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/54651920">Hossein Miri Lavasani</a>, <a href="http://academic.research.microsoft.com/Author/18137595">Wanling Pan</a>, <a href="http://academic.research.microsoft.com/Author/55606916">Brandon P. Harrington</a>, <a href="http://academic.research.microsoft.com/Author/3766139">Reza Abdolvand</a>, <a href="http://academic.research.microsoft.com/Author/3514115">Farrokh Ayazi</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6200000">view publication</a></span></p><p>This paper reports on the demonstration of series tuning for lateral micromechanical oscillators and its application for electronic temperature compensation of piezoelectric lateral bulk acoustic resonator (LBAR) micromechanical oscillators. Two aluminum nitride-on-silicon (AlN-on-Si) piezoelectric LBARs, one operating at 427 MHz $({R}_{m} \approx 180~\Omega,~{\rm Q}_{\rm unloaded} \approx 1400)$ and the other operating at ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1381-1393, 2012</cite>]]></description></item><item><title>A 52 mW Full HD 160Degree Object Viewpoint Recognition SoC With Visual Vocabulary Processor for Wearable Vision Applications</title><link>http://academic.research.microsoft.com/Publication/57012523</link><pubDate>Mon, 20 May 2013 00:46:14 GMT</pubDate><guid isPermaLink="false">57012523</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/21076663">Yu-Chi Su</a>, <a href="http://academic.research.microsoft.com/Author/18537685">Keng-Yen Huang</a>, <a href="http://academic.research.microsoft.com/Author/3627761">Tse-Wei Chen</a>, <a href="http://academic.research.microsoft.com/Author/3488186">Yi-Min Tsai</a>, <a href="http://academic.research.microsoft.com/Author/587231">Shao-Yi Chien</a>, <a href="http://academic.research.microsoft.com/Author/42845750">Liang-Gee Chen</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06156762">view publication</a></span></p><p>A 1920$\,\times\,$ 1080 160$^{\circ}$ object viewpoint recognition system-on-chip (SoC) is presented in this paper. The SoC design is dedicated to wearable vision applications, and we address several crucial issues including the low recognition accuracy due to the use of low resolution images and dramatic changes in object viewpoints, and the high power consumption caused by the ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 797-809, 2012</cite>]]></description></item><item><title>A Fully Digital Delay Line Based GHz Range Multimode Transmitter Front-End in 65-nm CMOS</title><link>http://academic.research.microsoft.com/Publication/57020081</link><pubDate>Mon, 20 May 2013 00:46:13 GMT</pubDate><guid isPermaLink="false">57020081</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/52732614">Pieter A. J. Nuyts</a>, <a href="http://academic.research.microsoft.com/Author/13047065">Peter Singerl</a>, <a href="http://academic.research.microsoft.com/Author/50480589">Franz Dielacher</a>, <a href="http://academic.research.microsoft.com/Author/12664960">Patrick Reynaert</a>, <a href="http://academic.research.microsoft.com/Author/3354361">Wim Dehaene</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6186743">view publication</a></span></p><p>This paper presents a fully digital polar up-converter for wireless transmission in the GHz range. The system is designed to drive two class-E power amplifiers (PAs) with a power combiner. It uses baseband pulse width modulation (PWM) for the amplitude modulation (AM), whereas phase modulation (PM) is implemented by shifting the RF carrier in time. Both the PWM ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1681-1692, 2012</cite>]]></description></item><item><title>Isolation Techniques Against Substrate Noise Coupling Utilizing Through Silicon Via (TSV) Process for RF/Mixed-Signal SoCs</title><link>http://academic.research.microsoft.com/Publication/57012522</link><pubDate>Mon, 20 May 2013 00:46:12 GMT</pubDate><guid isPermaLink="false">57012522</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/52218765">Shinichiro Uemura</a>, <a href="http://academic.research.microsoft.com/Author/22436405">Yukio Hiraoka</a>, <a href="http://academic.research.microsoft.com/Author/51074510">Takayuki Kai</a>, <a href="http://academic.research.microsoft.com/Author/10611375">Shiro Dosho</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6156482">view publication</a></span></p><p>The isolation techniques against substrate noise coupling utilizing through silicon via (TSV) process are described. The trench shape TSV encloses the RF circuit on a SoC chip to improve the isolation between digital circuits and the RF circuits without constraints of on-chip interconnect above first metal as the TSV is connected to the grounded 1st metal from the back ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 810-816, 2012</cite>]]></description></item><item><title>A 2.5 kV Isolation 35 kV/us CMR 250 Mbps Digital Isolator in Standard CMOS With a Small Transformer Driving Technique</title><link>http://academic.research.microsoft.com/Publication/57022688</link><pubDate>Mon, 20 May 2013 00:46:11 GMT</pubDate><guid isPermaLink="false">57022688</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/12665132">Shunichi Kaeriyama</a>, <a href="http://academic.research.microsoft.com/Author/55756585">Shinichi Uchida</a>, <a href="http://academic.research.microsoft.com/Author/439734">Masayuki Furumiya</a>, <a href="http://academic.research.microsoft.com/Author/56681973">Mitsuji Okada</a>, <a href="http://academic.research.microsoft.com/Author/53577744">Tadashi Maeda</a>, <a href="http://academic.research.microsoft.com/Author/53685505">Masayuki Mizuno</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6075274">view publication</a></span></p><p>A small-size on-chip transformer-based digital isolator for power control systems is proposed. With a proposed pulse generation and detection scheme that enables a 5 V standard CMOS transistor to utilize GHz-band signals, transformer area is reduced to 1/4–1/8 that of conventional transformers. A test chip achieves a 2.5 kV isolation voltage, a ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 2, pp. 435-443, 2012</cite>]]></description></item><item><title>A Fully Integrated, 290 pJ/bit UWB Dual-Mode Transceiver for cm-Range Wireless Interconnects</title><link>http://academic.research.microsoft.com/Publication/57024895</link><pubDate>Mon, 20 May 2013 00:46:10 GMT</pubDate><guid isPermaLink="false">57024895</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/18191622">Simone Gambini</a>, <a href="http://academic.research.microsoft.com/Author/47175053">John Crossley</a>, <a href="http://academic.research.microsoft.com/Author/2853264">Elad Alon</a>, <a href="http://academic.research.microsoft.com/Author/49727349">Jan M. Rabaey</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6122036">view publication</a></span></p><p>We present an ultra-wideband transceiver designed for ultra-low-power communication at sub-10 cm range. The transceiver operates at a 5.6 GHz carrier frequency, chosen to minimize path loss when using a 1 cm $^{2}$ antenna, and can switch its architecture between self-synchronous rectification and low-IF to adapt its power consumption to the channel characteristic ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 3, pp. 586-598, 2012</cite>]]></description></item><item><title>The Design of All-Digital Polar Transmitter Based on ADPLL and Phase Synchronized ΔΣ Modulator</title><link>http://academic.research.microsoft.com/Publication/57014850</link><pubDate>Mon, 20 May 2013 00:46:09 GMT</pubDate><guid isPermaLink="false">57014850</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/49682252">Jian Chen</a>, <a href="http://academic.research.microsoft.com/Author/3796739">Liang Rong</a>, <a href="http://academic.research.microsoft.com/Author/3400702">Fredrik Jonsson</a>, <a href="http://academic.research.microsoft.com/Author/45983759">Geng Yang</a>, <a href="http://academic.research.microsoft.com/Author/799191">Li-Rong Zheng</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06171874">view publication</a></span></p><p>An improved architecture of polar transmitter (TX) is presented. The proposed architecture is digitally-intensive and mainly composed of an all-digital PLL (ADPLL) for phase modulation, a 1-bit low-pass delta sigma ΔΣ modulator for envelop modulation, and a H-bridge class-D power amplifier (PA) for differential signaling. The ΔΣ modulator is clocked using the phase modulated ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1154-1164, 2012</cite>]]></description></item><item><title>A Push-Push VCO With 13.9GHz Wide Tuning Range Using Loop-Ground Transmission Line for Full-Band 60GHz Transceiver</title><link>http://academic.research.microsoft.com/Publication/57020807</link><pubDate>Mon, 20 May 2013 00:46:08 GMT</pubDate><guid isPermaLink="false">57020807</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/807500">Takahiro Nakamura</a>, <a href="http://academic.research.microsoft.com/Author/51940448">Toru Masuda</a>, <a href="http://academic.research.microsoft.com/Author/50386118">Katsuyoshi Washio</a>, <a href="http://academic.research.microsoft.com/Author/49386833">Hiroshi Kondoh</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6177281">view publication</a></span></p><p>A 59-GHz push-push voltage-controlled oscillator (VCO)—based on 0.18-$\mu$m SiGe BiCMOS technology—for a full-band 60-GHz transceiver was developed. The VCO uses a loop-ground transmission line (LG-TML) composed of $\lambda _{{\rm f}0} /2$ signal lines (half wavelength at fundamental frequency) and $\lambda _{2{\rm f}0} /4$ secondary lines (...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1267-1277, 2012</cite>]]></description></item><item><title>A 0.18-$ \mu{\hbox {m}}$ Monolithic Li-Ion Battery Charger for Wireless Devices Based on Partial Current Sensing and Adaptive Reference Voltage</title><link>http://academic.research.microsoft.com/Publication/57020816</link><pubDate>Mon, 20 May 2013 00:46:07 GMT</pubDate><guid isPermaLink="false">57020816</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/56185544">Rosario Pagano</a>, <a href="http://academic.research.microsoft.com/Author/524464">Michael Baker</a>, <a href="http://academic.research.microsoft.com/Author/55195237">Russell E. Radke</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06188520">view publication</a></span></p><p>An Li-ion battery charger based on a charge-control buck regulator operating at 2.2 MHz is implemented in 180 nm CMOS technology. The novelty of the proposed charge-control converter consists of regulating the average output current by only sensing a portion of the inductor current and using an adaptive reference voltage. By adopting this approach, the charger ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1355-1368, 2012</cite>]]></description></item><item><title>A 3.5 GHz Spread-Spectrum Clock Generator With a Memoryless Newton-Raphson Modulation Profile</title><link>http://academic.research.microsoft.com/Publication/57014840</link><pubDate>Mon, 20 May 2013 00:46:06 GMT</pubDate><guid isPermaLink="false">57014840</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/56411458">Sewook Hwang</a>, <a href="http://academic.research.microsoft.com/Author/6175515">Minyoung Song</a>, <a href="http://academic.research.microsoft.com/Author/53566372">Young-Ho Kwak</a>, <a href="http://academic.research.microsoft.com/Author/3611430">Inhwa Jung</a>, <a href="http://academic.research.microsoft.com/Author/1438651">Chulwoo Kim</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6155616">view publication</a></span></p><p>A frequency-locked loop (FLL) based spread-spectrum clock generator (SSCG) with a memoryless Newton-Raphson modulation profile is introduced in this paper. The SSCG uses an FLL as a main clock generator. It brings not only an area reduction to the SSCG but also the advantage of having multiple frequency deviations. A double binary-weighted DAC is proposed that ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1199-1208, 2012</cite>]]></description></item><item><title>Associative Memory for Nearest-Hamming-Distance Search Based on Frequency Mapping</title><link>http://academic.research.microsoft.com/Publication/57020814</link><pubDate>Mon, 20 May 2013 00:46:05 GMT</pubDate><guid isPermaLink="false">57020814</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3458661">Hans Jürgen Mattausch</a>, <a href="http://academic.research.microsoft.com/Author/22342579">Wataru Imafuku</a>, <a href="http://academic.research.microsoft.com/Author/53401981">Akio Kawabata</a>, <a href="http://academic.research.microsoft.com/Author/53716831">Tania Ansari</a>, <a href="http://academic.research.microsoft.com/Author/55479606">Masahiro Yasuda</a>, <a href="http://academic.research.microsoft.com/Author/44124671">Tetsushi Koide</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06187670">view publication</a></span></p><p>The developed associative-memory architecture utilizes a mapping operation of the Hamming distances into frequency space with ring oscillators programmable in discrete frequency steps. As a result fast word-parallel search of the nearest Hamming distance with low power consumption is obtained. Additionally, high robustness against fabrication-related variations of the MOSFET characteristics is achievable by design because the size ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1448-1459, 2012</cite>]]></description></item><item><title>An Embedded DRAM Technology for High-Performance NAND Flash Memories</title><link>http://academic.research.microsoft.com/Publication/57022691</link><pubDate>Mon, 20 May 2013 00:46:04 GMT</pubDate><guid isPermaLink="false">57022691</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/53294653">Daisaburo Takashima</a>, <a href="http://academic.research.microsoft.com/Author/53530705">Mitsuhiro Noguchi</a>, <a href="http://academic.research.microsoft.com/Author/46544621">Noboru Shibata</a>, <a href="http://academic.research.microsoft.com/Author/55505733">Kazushige Kanda</a>, <a href="http://academic.research.microsoft.com/Author/47537640">Hiroshi Sukegawa</a>, <a href="http://academic.research.microsoft.com/Author/52106001">Shuso Fujii</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06081955">view publication</a></span></p><p>An embedded DRAM using a standard NAND flash memory process has been demonstrated for the first time. This embedded DRAM without extra costly manufacturing process realizes 2.4 mm$^{2}$ /Mb macro density and provides large-capacity on-chip page buffers and data caches for NAND flash memories to enhance their performances. A 32 KB DRAM buffer macro with 1....</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 2, pp. 536-546, 2012</cite>]]></description></item><item><title>A 30MHz–2.4GHz CMOS Receiver With Integrated RF Filter and Dynamic-Range-Scalable Energy Detector for Cognitive Radio Systems</title><link>http://academic.research.microsoft.com/Publication/57014841</link><pubDate>Mon, 20 May 2013 00:46:03 GMT</pubDate><guid isPermaLink="false">57014841</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/22335428">Masaki Kitsunezuka</a>, <a href="http://academic.research.microsoft.com/Author/47432038">Hiroshi Kodama</a>, <a href="http://academic.research.microsoft.com/Author/53144221">Naoki Oshima</a>, <a href="http://academic.research.microsoft.com/Author/640692">Kazuaki Kunihiro</a>, <a href="http://academic.research.microsoft.com/Author/53577744">Tadashi Maeda</a>, <a href="http://academic.research.microsoft.com/Author/2243279">Muneo Fukaishi</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6155617">view publication</a></span></p><p>A 30-MHz–2.4-GHz complementary metal oxide semiconductor (CMOS) receiver with an integrated tunable RF filter and a dynamic-range-scalable energy detector for both white-space and interference-level sensing in cognitive radio systems is reported. The second-order RF filter has only two stacked transistors, and its use, in combination with a subsequent harmonic rejection mixer, ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1084-1093, 2012</cite>]]></description></item><item><title>A 65-nm, 1-A Buck Converter With Multi-Function SAR-ADC-Based CCM/PSK Digital Control Loop</title><link>http://academic.research.microsoft.com/Publication/57020105</link><pubDate>Mon, 20 May 2013 00:46:02 GMT</pubDate><guid isPermaLink="false">57020105</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/22332641">Sébastien Cliquennois</a>, <a href="http://academic.research.microsoft.com/Author/46389057">Achille Donida</a>, <a href="http://academic.research.microsoft.com/Author/3354396">Piero Malcovati</a>, <a href="http://academic.research.microsoft.com/Author/12605464">Andrea Baschirotto</a>, <a href="http://academic.research.microsoft.com/Author/1974173">Angelo Nagari</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6222363">view publication</a></span></p><p>This paper proposes a 1-A, 6.4-MHz switching frequency DC-DC converter with embedded digital controller, implemented in 65-nm CMOS technology. The proposed DC-DC converter, exploiting a customized, multi-function SAR ADC and a non-linear PID controller, can switch automatically between continuous-conduction mode and pulse-skipping mode, thus maintaining a fairly large efficiency also ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1546-1556, 2012</cite>]]></description></item><item><title>A High-Resolution Accelerometer With Electrostatic Damping and Improved Supply Sensitivity</title><link>http://academic.research.microsoft.com/Publication/57020094</link><pubDate>Mon, 20 May 2013 00:46:01 GMT</pubDate><guid isPermaLink="false">57020094</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/34064534">Mikail Yucetas</a>, <a href="http://academic.research.microsoft.com/Author/21642276">Mika Pulkkinen</a>, <a href="http://academic.research.microsoft.com/Author/34064533">Antti Kalanti</a>, <a href="http://academic.research.microsoft.com/Author/34064535">Jarno Salomaa</a>, <a href="http://academic.research.microsoft.com/Author/21666482">Lasse Aaltonen</a>, <a href="http://academic.research.microsoft.com/Author/1968903">Kari Halonen</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06193185">view publication</a></span></p><p>In this paper, a charge-balancing accelerometer is presented. A hybrid interface topology is utilised to achieve high resolution, high linearity and low power supply sensitivity. The accelerometer consists of a micromechanical sensor element, a self-balancing bridge (SBB) open-loop readout, AC force feedback and $\Delta \Sigma$ ADC. The SBB converts acceleration to ratiometric voltage. The ratiometric output of ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1721-1730, 2012</cite>]]></description></item><item><title>A 3.4 W DigitalIn Class-D Audio Amplifier in 0.14 $\mu $m CMOS</title><link>http://academic.research.microsoft.com/Publication/57020104</link><pubDate>Mon, 20 May 2013 00:46:00 GMT</pubDate><guid isPermaLink="false">57020104</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/22313304">Lûtsen Dooper</a>, <a href="http://academic.research.microsoft.com/Author/10611492">Marco Berkhout</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06222362">view publication</a></span></p><p>In this paper a class-D audio amplifier for mobile applications is presented realized in a 0.14 $\mu\hbox{m}$ CMOS technology tailored for mobile applications. The amplifier has a simple PDM-based digital interface for audio and control that requires only two pins and enables assembly in 9-bump WL-CSP. The complete audio path is discussed that ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1524-1534, 2012</cite>]]></description></item><item><title>Firm decisions and market responses: Three accounting essays</title><link>http://academic.research.microsoft.com/Publication/59618228</link><pubDate>Mon, 20 May 2013 00:45:59 GMT</pubDate><guid isPermaLink="false">59618228</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/54959318">I. Q. H. van Amelsfoort</a><span style="margin-left:20px" /><span style="margin-left:20px"></span></p><p>Abstract: Firms operate in a complex economic environment where they interact with a broad base of stakeholders. Stakeholders are interested in the economic environment of the firm and its prospects to determine the value of their claims. For this valuation a wide range of information sources is used which per definition provide a depiction of the firm and its economic ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, 2012</cite>]]></description></item><item><title>Insider trading, shareholder activism, and corporate policies</title><link>http://academic.research.microsoft.com/Publication/59618229</link><pubDate>Mon, 20 May 2013 00:45:58 GMT</pubDate><guid isPermaLink="false">59618229</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/47976506">P. Cziraki</a><span style="margin-left:20px" /><span style="margin-left:20px"></span></p><p>Abstract: This doctoral thesis focuses on two topics that have received considerable attention from academics, regulators, and the business press over the past decades: insider trading, and shareholder activism. The first chapter evaluates proxy proposals as a corporate governance device in Europe. The second chapter analyzes the relation between firm-level corporate governance rules and the profitability of insider trading. ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, 2012</cite>]]></description></item><item><title>Between Show Trials and Sham Prosecutions: The Rome Statute's Potential Effect on Domestic Due Process Protections</title><link>http://academic.research.microsoft.com/Publication/59618231</link><pubDate>Mon, 20 May 2013 00:45:57 GMT</pubDate><guid isPermaLink="false">59618231</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/48314854">E. G. Fry</a><span style="margin-left:20px" /><span style="margin-left:20px"></span></p><p /><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, 2012</cite>]]></description></item><item><title>A 0.24-nJ/b Wireless Body-Area-Network Transceiver With Scalable Double-FSK Modulation</title><link>http://academic.research.microsoft.com/Publication/56946764</link><pubDate>Mon, 20 May 2013 00:45:56 GMT</pubDate><guid isPermaLink="false">56946764</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/22325102">Joonsung Bae</a>, <a href="http://academic.research.microsoft.com/Author/34065355">Kiseok Song</a>, <a href="http://academic.research.microsoft.com/Author/1077151">Hyungwoo Lee</a>, <a href="http://academic.research.microsoft.com/Author/52720024">Hyunwoo Cho</a>, <a href="http://academic.research.microsoft.com/Author/2172229">Hoi-Jun Yoo</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6069578">view publication</a></span></p><p>An energy-efficient wireless body-area-network (WBAN) transceiver is implemented in 0.18-$\mu$ m CMOS technology with 1-V supply voltage. For the low energy consumption, the body channel communication (BCC) PHY is utilized with the theoretical results of Maxwell's equation analysis behind the BCC. Based on the channel analysis, the resonance matching (RM) and contact impedance ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 310-322, 2012</cite>]]></description></item><item><title>A 0.013 ${\hbox {mm}}^{2}$, 5 $\mu\hbox{W}$ , DC-Coupled Neural Signal Acquisition IC With 0.5 V Supply</title><link>http://academic.research.microsoft.com/Publication/56947217</link><pubDate>Mon, 20 May 2013 00:45:55 GMT</pubDate><guid isPermaLink="false">56947217</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/56324217">Rikky Muller</a>, <a href="http://academic.research.microsoft.com/Author/18191622">Simone Gambini</a>, <a href="http://academic.research.microsoft.com/Author/49727349">Jan M. Rabaey</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06015500">view publication</a></span></p><p>We present an area-efficient neural signal-acquisition system that uses a digitally intensive architecture to reduce system area and enable operation from a 0.5 V supply. The architecture replaces ac coupling capacitors and analog filters with a dual mixed-signal servo loop, which allows simultaneous digitization of the action and local field potentials. A noise-efficient DAC topology ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 232-243, 2012</cite>]]></description></item><item><title>Digitally-Controlled Polar Transmitter Using a Watt-Class Current-Mode Class-D CMOS Power Amplifier and Guanella Reverse Balun for Handset Applications</title><link>http://academic.research.microsoft.com/Publication/57014835</link><pubDate>Mon, 20 May 2013 00:45:54 GMT</pubDate><guid isPermaLink="false">57014835</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3670518">Toshifumi Nakatani</a>, <a href="http://academic.research.microsoft.com/Author/22324418">Jeremy Rode</a>, <a href="http://academic.research.microsoft.com/Author/10708186">Donald F. Kimball</a>, <a href="http://academic.research.microsoft.com/Author/74614">Lawrence E. Larson</a>, <a href="http://academic.research.microsoft.com/Author/681958">Peter M. Asbeck</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06153032">view publication</a></span></p><p>A digitally-controlled polar transmitter with a watt-class CMOS power amplifier is demonstrated, implemented in a 0.15 $\mu{\hbox {m}}$ RF CMOS process. Stacked FETs in a current-mode class-D configuration are used to obtain high breakdown voltage and high efficiency in the output stage, and a doughnut-shaped Guanella reverse balun is applied to achieve a ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1104-1112, 2012</cite>]]></description></item><item><title>A 5Gb/s Automatic Gain Control Amplifier With Temperature Compensation</title><link>http://academic.research.microsoft.com/Publication/57020819</link><pubDate>Mon, 20 May 2013 00:45:53 GMT</pubDate><guid isPermaLink="false">57020819</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/21722263">Chang Liu</a>, <a href="http://academic.research.microsoft.com/Author/24495307">Yue-Peng Yan</a>, <a href="http://academic.research.microsoft.com/Author/55314576">Wang-Ling Goh</a>, <a href="http://academic.research.microsoft.com/Author/43129397">Yong-Zhong Xiong</a>, <a href="http://academic.research.microsoft.com/Author/681628">Li-Jun Zhang</a>, <a href="http://academic.research.microsoft.com/Author/303932">Mohammad Madihian</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6193398">view publication</a></span></p><p>This paper presents an automatic gain control (AGC) amplifier with temperature compensation for high-speed applications. The proposed AGC consists of a folded Gilbert variable gain amplifier (VGA), a dc offset canceller, inductorless post amplifiers, a linear open-loop peak detector (PD), an integrator, a symmetrical exponential voltage generator, and a compensation block for temperature stability. The novel temperature compensation ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1323-1333, 2012</cite>]]></description></item><item><title>Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications</title><link>http://academic.research.microsoft.com/Publication/57020820</link><pubDate>Mon, 20 May 2013 00:45:52 GMT</pubDate><guid isPermaLink="false">57020820</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/34033253">Pi-Feng Chiu</a>, <a href="http://academic.research.microsoft.com/Author/248452">Meng-Fan Chang</a>, <a href="http://academic.research.microsoft.com/Author/56729308">Che-Wei Wu</a>, <a href="http://academic.research.microsoft.com/Author/42875222">Ching-Hao Chuang</a>, <a href="http://academic.research.microsoft.com/Author/34033254">Shyh-Shyuan Sheu</a>, <a href="http://academic.research.microsoft.com/Author/1929500">Yu-Sheng Chen</a>, <a href="http://academic.research.microsoft.com/Author/1179691">Ming-Jinn Tsai</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06197240">view publication</a></span></p><p>Many mobile SoC chips employ a “two-macro” approach including volatile and nonvolatile memory macros (i.e. SRAM and Flash), to achieve high-performance or low-voltage power-on operation with the capability of power-off nonvolatile data storage. However, the two-macro approach suffers from slow store/restore speeds due to word-by-word serial transfer of data between ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1483-1496, 2012</cite>]]></description></item><item><title>An Event-Driven Multi-Kernel Convolution Processor Module for Event-Driven Vision Sensors</title><link>http://academic.research.microsoft.com/Publication/57022680</link><pubDate>Mon, 20 May 2013 00:45:51 GMT</pubDate><guid isPermaLink="false">57022680</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3742046">Luis Camunas-Mesa</a>, <a href="http://academic.research.microsoft.com/Author/3833792">Carlos Zamarreno-Ramos</a>, <a href="http://academic.research.microsoft.com/Author/1146920">Alejandro Linares-Barranco</a>, <a href="http://academic.research.microsoft.com/Author/3507421">Antonio J. Acosta-Jimenez</a>, <a href="http://academic.research.microsoft.com/Author/1607341">Teresa Serrano-Gotarredona</a>, <a href="http://academic.research.microsoft.com/Author/54410491">Bernabé Linares-Barranco</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6054033">view publication</a></span></p><p>Event-Driven vision sensing is a new way of sensing visual reality in a frame-free manner. This is, the vision sensor (camera) is not capturing a sequence of still frames, as in conventional video and computer vision systems. In Event-Driven sensors each pixel autonomously and asynchronously decides when to send its address out. This way, the sensor output ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 2, pp. 504-517, 2012</cite>]]></description></item><item><title>A Pulse Shaping Technique for Spur Suppression in Injection-Locked Synthesizers</title><link>http://academic.research.microsoft.com/Publication/57024892</link><pubDate>Mon, 20 May 2013 00:45:50 GMT</pubDate><guid isPermaLink="false">57024892</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/47590087">Mehran M. Izad</a>, <a href="http://academic.research.microsoft.com/Author/10612676">Chun-Huat Heng</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6108312">view publication</a></span></p><p>Frequency synthesizers based on sub-harmonic injection-locked oscillators can reduce power and area effectively. However, they suffer from unwanted side-bands caused by undesirable harmonics in the injection pulse. This paper presents a pulse shaping technique that reduces these undesirable harmonics in the injection pulse and produces low-spur synthesized output. The robustness of the proposed technique and the ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 3, pp. 652-664, 2012</cite>]]></description></item><item><title>A Wideband Digital RF Receiver Front-End Employing a New Discrete-Time Filter for m-WiMAX</title><link>http://academic.research.microsoft.com/Publication/57014836</link><pubDate>Mon, 20 May 2013 00:45:49 GMT</pubDate><guid isPermaLink="false">57014836</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/22560348">Heesong Seo</a>, <a href="http://academic.research.microsoft.com/Author/49336474">Inyoung Choi</a>, <a href="http://academic.research.microsoft.com/Author/22324708">Jehyung Yoon</a>, <a href="http://academic.research.microsoft.com/Author/2417007">Bumman Kim</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6153033">view publication</a></span></p><p>A wideband digital RF receiver front-end employing a discrete-time (DT) filter is presented for application to m-WiMAX (WiBro). By employing a sampling mixer and a DT filter, the receiver operates in the charge domain. In addition to the flexibility of the DT filter, the new non-decimation finite impulse response (NDF) filter can be cascaded to a ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1165-1174, 2012</cite>]]></description></item><item><title>A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With Nondestructive Self-Reference Sensing Scheme</title><link>http://academic.research.microsoft.com/Publication/57022685</link><pubDate>Mon, 20 May 2013 00:45:48 GMT</pubDate><guid isPermaLink="false">57022685</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/1247646">Yiran Chen</a>, <a href="http://academic.research.microsoft.com/Author/2270629">Hai Li</a>, <a href="http://academic.research.microsoft.com/Author/23488997">Xiaobin Wang</a>, <a href="http://academic.research.microsoft.com/Author/53493553">Wenzhong Zhu</a>, <a href="http://academic.research.microsoft.com/Author/47318034">Wei Xu</a>, <a href="http://academic.research.microsoft.com/Author/164098">Tong Zhang</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06071019">view publication</a></span></p><p>Among all the emerging memories, Spin-Transfer Torque Random Access Memory (STT-RAM) has demonstrated many promising features such as fast access speed, nonvolatility, excellent scalability, and compatibility to CMOS process. However, the large process variations of both magnetic tunneling junction (MTJ) and MOS transistors in the scaled technologies severely limit the yield of STT-RAM chips. In this work, ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 2, pp. 560-573, 2012</cite>]]></description></item><item><title>A Low-Voltage 1 Mb FRAM in 0.13 $\mu$m CMOS Featuring Time-to-Digital Sensing for Expanded Operating Margin</title><link>http://academic.research.microsoft.com/Publication/56947220</link><pubDate>Mon, 20 May 2013 00:45:47 GMT</pubDate><guid isPermaLink="false">56947220</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3830956">Masood Qazi</a>, <a href="http://academic.research.microsoft.com/Author/23596655">Michael Clinton</a>, <a href="http://academic.research.microsoft.com/Author/49621353">Steven Bartling</a>, <a href="http://academic.research.microsoft.com/Author/50690481">Anantha P. Chandrakasan</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6025222">view publication</a></span></p><p>In the effort to achieve low access energy non-volatile memory, challenges are encountered in sensing data at low power supply voltage. This work presents the design of a ferroelectric random access memory (FRAM) as a promising candidate for this need. The challenges of sensing diminishingly small charge and developing circuits compatible with the scaling of FRAM technology to low ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 1, pp. 141-150, 2012</cite>]]></description></item><item><title>Wideband 2 to 6 GHz RF Front-End With Blocker Filtering</title><link>http://academic.research.microsoft.com/Publication/57020087</link><pubDate>Mon, 20 May 2013 00:45:46 GMT</pubDate><guid isPermaLink="false">57020087</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/21666476">Mikko Kaltiokallio</a>, <a href="http://academic.research.microsoft.com/Author/18238075">Ville Saari</a>, <a href="http://academic.research.microsoft.com/Author/22334450">Sami Kallioinen</a>, <a href="http://academic.research.microsoft.com/Author/1033554">Aarno Parssinen</a>, <a href="http://academic.research.microsoft.com/Author/12661249">Jussi Ryynanen</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6191330">view publication</a></span></p><p>This paper presents a wideband blocker filtering technique for an RF front-end. A wideband LNA and a transferred impedance filter are implemented as part of a receiver to demonstrate the feasibility of the system. The transferred impedance filter includes an adjustable polyphase filter to compensate for the phase shift in the system in order to maintain correct operating frequency. ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1636-1645, 2012</cite>]]></description></item><item><title>A 12 b 5-to-50 MS/s 0.5-to-1 V Voltage Scalable Zero-Crossing Based Pipelined ADC</title><link>http://academic.research.microsoft.com/Publication/57020098</link><pubDate>Mon, 20 May 2013 00:45:45 GMT</pubDate><guid isPermaLink="false">57020098</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/47366784">Sunghyuk Lee</a>, <a href="http://academic.research.microsoft.com/Author/50690481">Anantha P. Chandrakasan</a>, <a href="http://academic.research.microsoft.com/Author/1692283">Hae-Seung Lee</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6203615">view publication</a></span></p><p>A voltage scalable zero-crossing based (ZCB) pipelined ADC built in 65 nm CMOS is described. The highly digital implementation characteristic of the ZCB circuit technique enables energy efficient operation and supply voltage scaling. Several new techniques including the unidirectional coarse-fine charge transfer scheme, programmable ramp rates, and flash resistor ladder scaling, are developed to allow efficient operation at ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 7, pp. 1603-1614, 2012</cite>]]></description></item><item><title>A Low-Phase-Noise Wide-Tuning-Range Oscillator Based on Resonant Mode Switching</title><link>http://academic.research.microsoft.com/Publication/57020813</link><pubDate>Mon, 20 May 2013 00:45:44 GMT</pubDate><guid isPermaLink="false">57020813</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/13191628">Guansheng Li</a>, <a href="http://academic.research.microsoft.com/Author/55010814">Li Liu</a>, <a href="http://academic.research.microsoft.com/Author/3574976">Yiwu Tang</a>, <a href="http://academic.research.microsoft.com/Author/13191629">Ehsan Afshari</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6184333">view publication</a></span></p><p>In this paper we will present a low-phase-noise wide-tuning-range oscillator suitable for scaled CMOS processes. It switches between the two resonant modes of a high-order LC resonator that consists of two identical LC tanks coupled by capacitor and transformer. The mode switching method does not add lossy switches to the resonator and thus doubles frequency ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1295-1308, 2012</cite>]]></description></item><item><title>A 10 Gb/s 45 mW Adaptive 60 GHz Baseband in 65 nm CMOS</title><link>http://academic.research.microsoft.com/Publication/57012535</link><pubDate>Mon, 20 May 2013 00:45:43 GMT</pubDate><guid isPermaLink="false">57012535</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3575902">Chintan Thakkar</a>, <a href="http://academic.research.microsoft.com/Author/22335516">Lingkai Kong</a>, <a href="http://academic.research.microsoft.com/Author/51299617">Kwangmo Jung</a>, <a href="http://academic.research.microsoft.com/Author/18459405">Antoine Frappe</a>, <a href="http://academic.research.microsoft.com/Author/2853264">Elad Alon</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06166908">view publication</a></span></p><p>This paper presents a low-power mixed-signal adaptive 60 GHz baseband in 65 nm CMOS. The design integrates variable gain amplifiers, analog phase rotator, 40-coefficient I/Q decision feedback equalizers (DFEs), clock generation and data recovery circuits, and adaptation hardware. The baseband achieves 10 Gb/s operation with ${\rm BER}&amp;lt;10^{-12}$ while consuming 53 mW (adaptation ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 952-968, 2012</cite>]]></description></item><item><title>A Combined Series-Parallel Hybrid Envelope Amplifier for Envelope Tracking Mobile Terminal RF Power Amplifier Applications</title><link>http://academic.research.microsoft.com/Publication/57014834</link><pubDate>Mon, 20 May 2013 00:45:42 GMT</pubDate><guid isPermaLink="false">57014834</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/46745672">Muhammad Hassan</a>, <a href="http://academic.research.microsoft.com/Author/74614">Lawrence E. Larson</a>, <a href="http://academic.research.microsoft.com/Author/10612776">Vincent W. Leung</a>, <a href="http://academic.research.microsoft.com/Author/681958">Peter M. Asbeck</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6153031">view publication</a></span></p><p>An improved envelope amplifier architecture for envelope tracking RF power amplifiers is presented, consisting of two switching amplifiers and one linear amplifier. The first switching amplifier and the linear amplifier provide wideband and high-efficiency operation, while the second switching amplifier provides a reduced bandwidth variable supply to the linear amplifier to further reduce power loss. The first switching amplifier ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 5, pp. 1185-1198, 2012</cite>]]></description></item><item><title>An Area and Energy-Efficient Multimode FFT Processor for WPAN/WLAN/WMAN Systems</title><link>http://academic.research.microsoft.com/Publication/57020810</link><pubDate>Mon, 20 May 2013 00:45:41 GMT</pubDate><guid isPermaLink="false">57020810</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/22312441">Song-Nien Tang</a>, <a href="http://academic.research.microsoft.com/Author/3538575">Chi-Hsiang Liao</a>, <a href="http://academic.research.microsoft.com/Author/1117691">Tsin-Yuan Chang</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06180005">view publication</a></span></p><p>This paper presents a multimode FFT processor for wireless personal area network (WPAN), wireless local area network (WLAN), and wireless metropolitan area network (WMAN) applications. Using the proposed flexible-radix-configuration multipath-delay-feedback (FRCMDF) architecture, variable-length/multiple-stream FFTs capable of achieving a high throughput can be performed in a hardware-efficient manner. Based on the FRCMDF structure, ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1419-1435, 2012</cite>]]></description></item><item><title>Efficient Energy Harvesting With Electromagnetic Energy Transducers Using Active Low-Voltage Rectification and Maximum Power Point Tracking</title><link>http://academic.research.microsoft.com/Publication/57020805</link><pubDate>Mon, 20 May 2013 00:45:40 GMT</pubDate><guid isPermaLink="false">57020805</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/22291838">Dominic Maurath</a>, <a href="http://academic.research.microsoft.com/Author/10423641">Philipp F. Becker</a>, <a href="http://academic.research.microsoft.com/Author/22290922">Dirk Spreemann</a>, <a href="http://academic.research.microsoft.com/Author/47482933">Yiannos Manoli</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6175966">view publication</a></span></p><p>This paper reports on efficient interfacing of typical vibration-driven electromagnetic transducers for micro energy harvesting. For this reason, an adaptive charge pump for dynamic maximum power point tracking is compared with a novel active full-wave rectifier design. For efficient ultra-low voltage rectification, the introduced active diode design uses a common-gate stage in conjunction with supply-independent ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1369-1380, 2012</cite>]]></description></item><item><title>A Monolithic 25Gb/s Transceiver With Photonic Ring Modulators and Ge Detectors in a 130-nm CMOS SOI Process</title><link>http://academic.research.microsoft.com/Publication/57020811</link><pubDate>Mon, 20 May 2013 00:45:39 GMT</pubDate><guid isPermaLink="false">57020811</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/18108860">James F. Buckwalter</a>, <a href="http://academic.research.microsoft.com/Author/903778">Xuezhe Zheng</a>, <a href="http://academic.research.microsoft.com/Author/3477541">Guoliang Li</a>, <a href="http://academic.research.microsoft.com/Author/19184873">Kannan Raj</a>, <a href="http://academic.research.microsoft.com/Author/50606885">Ashok V. Krishnamoorthy</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6182718">view publication</a></span></p><p>A fully-integrated, silicon photonic transceiver is demonstrated in a silicon-on-insulator process using photonic microring resonator modulators for low power consumption. The trade-offs between bandwidth and extinction ratio are discussed and motivate the use of transmit pre-emphasis for ring modulators to increase the interconnect data rate. The transmitter and receiver is demonstrated to data rates of ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1309-1322, 2012</cite>]]></description></item><item><title>Synchronous-Logic and Globally-Asynchronous-Locally-Synchronous (GALS) Acoustic Digital Signal Processors</title><link>http://academic.research.microsoft.com/Publication/57024902</link><pubDate>Mon, 20 May 2013 00:45:38 GMT</pubDate><guid isPermaLink="false">57024902</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/3478928">Kwen-Siong Chong</a>, <a href="http://academic.research.microsoft.com/Author/3575216">Kok-Leong Chang</a>, <a href="http://academic.research.microsoft.com/Author/1830593">Bah-Hwee Gwee</a>, <a href="http://academic.research.microsoft.com/Author/3341479">Joseph S. Chang</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06151220">view publication</a></span></p><p>We design an Acoustic Digital Signal Processor (ADSP) SoC, the primary signal processing module of an acoustic signal detection system, based on two design approaches: fully-synchronous (Fully-Sync), and globally-asynchronous-locally-synchronous (GALS). The emphasis of the ADSP designs is low power operation where both designs embody modular-level and circuit-level clock gating techniques. For sake of ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 3, pp. 769-780, 2012</cite>]]></description></item><item><title>A 100 W 5.1Channel Digital Class-D Audio Amplifier With Single-Chip Design</title><link>http://academic.research.microsoft.com/Publication/57020808</link><pubDate>Mon, 20 May 2013 00:45:37 GMT</pubDate><guid isPermaLink="false">57020808</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/18058560">Jia-Ming Liu</a>, <a href="http://academic.research.microsoft.com/Author/47537023">Shih-Hsiung Chien</a>, <a href="http://academic.research.microsoft.com/Author/12619174">Tai-Haur Kuo</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06177693">view publication</a></span></p><p>A 100 W, 5.1-channel, single-chip, digital-input class-D audio amplifier with a low-voltage (LV) digital circuit and high-voltage (HV) switching power stage is designed for moderate-performance and cost-effective speaker systems. The LV portion, including multi-channel audio processors, delta-sigma modulators (DSMs), and pulse-width modulation (PWM) generators, is implemented with a ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 6, pp. 1344-1354, 2012</cite>]]></description></item><item><title>A 667 MHz Logic-Compatible Embedded DRAM Featuring an Asymmetric 2T Gain Cell for High Speed On-Die Caches</title><link>http://academic.research.microsoft.com/Publication/57022690</link><pubDate>Mon, 20 May 2013 00:45:36 GMT</pubDate><guid isPermaLink="false">57022690</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/11016962">Ki Chul Chun</a>, <a href="http://academic.research.microsoft.com/Author/1174330">Pulkit Jain</a>, <a href="http://academic.research.microsoft.com/Author/51894372">Tae-Ho Kim</a>, <a href="http://academic.research.microsoft.com/Author/12529802">Chris H. Kim</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6081952">view publication</a></span></p><p>Circuit techniques for enhancing the retention time and random cycle of logic-compatible embedded DRAMs (eDRAMs) are presented. An asymmetric 2T gain cell utilizes the gate and junction leakages of a PMOS write device to maintain a high data ‘1’ voltage level which enables fast read access using an NMOS read device. A current-mode sense amplifier (C-S/A) ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 2, pp. 547-559, 2012</cite>]]></description></item><item><title>Power Optimized ADC-Based Serial Link Receiver</title><link>http://academic.research.microsoft.com/Publication/57012519</link><pubDate>Mon, 20 May 2013 00:45:35 GMT</pubDate><guid isPermaLink="false">57012519</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/22335065">E-Hung Chen</a>, <a href="http://academic.research.microsoft.com/Author/22312997">Ramy Yousry</a>, <a href="http://academic.research.microsoft.com/Author/701559">Chih-Kong Ken Yang</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06153030">view publication</a></span></p><p>Implementing serial I/O receivers based on analog-to-digital converters (ADCs) and digital signal post-processing has drawn growing interest with technology scaling, but power consumption remains among the key issues for such digital receiver in high speed applications. This paper presents an ADC-based receiver that uses a low-gain analog and mixed-mode pre-equalizer in conjunction ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 938-951, 2012</cite>]]></description></item><item><title>A 0.5 V 1.1 MS/sec 6.3 fJ/Conversion-Step SAR-ADC With Tri-Level Comparator in 40 nm CMOS</title><link>http://academic.research.microsoft.com/Publication/57012534</link><pubDate>Mon, 20 May 2013 00:45:34 GMT</pubDate><guid isPermaLink="false">57012534</guid><description><![CDATA[<p><a href="http://academic.research.microsoft.com/Author/53769040">Akira Shikata</a>, <a href="http://academic.research.microsoft.com/Author/56205928">Ryota Sekimoto</a>, <a href="http://academic.research.microsoft.com/Author/42840925">Tadahiro Kuroda</a>, <a href="http://academic.research.microsoft.com/Author/13218126">Hiroki Ishikuro</a><span style="margin-left:20px" /><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6165388">view publication</a></span></p><p>This paper presents an extremely low-voltage operation and power efficient successive-approximation-register (SAR) analog-to-digital converter (ADC). Tri-level comparator is proposed to relax the speed requirement of the comparator and decrease the resolution of internal Digital-to-Analog Converter (DAC) by 1-bit. The internal charge redistribution DAC employs unit capacitance of 0.5 fF and ...</p><cite></cite><cite>Journal: <a href="http://academic.research.microsoft.com/Journal/5320">IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS</a>, vol. 47, no. 4, pp. 1022-1030, 2012</cite>]]></description></item></channel></rss>